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Power semiconductor device packaging structure and packaging method

A power semiconductor and device packaging technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as brittle fracture, chip bending, chip cracks, etc.

Active Publication Date: 2018-06-29
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above analysis, the embodiment of the present invention proposes a power semiconductor device packaging structure and packaging method, which is used to solve the problem that in the existing packaging structure, there is a large difference in the pressure bearing area between the upper and lower sides of the chip, which causes serious chip bending, resulting in chip failure. Cracks or even brittle fracture lead to failure, which poses a serious threat to the device's preparation and service reliability

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  • Power semiconductor device packaging structure and packaging method
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  • Power semiconductor device packaging structure and packaging method

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Embodiment Construction

[0031] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer" and the like are based on the orientation or positional relationship shown in the accompanying drawings, and are only for It is convenient to describe the present invention and simplify the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a ...

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Abstract

The embodiment of the invention provides a power semiconductor device packaging structure and a power semiconductor device packaging method. The power semiconductor device packaging structure comprises at least one packaging submodule, wherein the packaging submodule comprises an upper metal sheet, a positioning frame, a power chip and a lower metal sheet; the power chip is arranged on the lower metal sheet; the upper metal sheet is clamped into the positioning frame, and the upper metal sheet and the positioning frame are jointly arranged on the power chip; the size of the upper metal sheet is not smaller than that of the lower metal sheet, and difference between the size of the upper metal sheet and the size of the lower metal sheet is smaller than a preset difference, so that the uppermetal sheet and the lower metal sheet have equivalent area, and thus bending of the chip in a power semiconductor device is effectively reduced, invalidation of the chip due to cracking or even brittle fracture is prevented and the reliability of the power semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device packaging, in particular to a power semiconductor device packaging structure and packaging method. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) has the advantages of large input impedance, small driving power, simple control circuit, small switching loss, fast switching speed, high operating frequency, large component capacity, and no snubbing circuit. Widely used in industrial converters, electric traction and other fields. Press-pack package is the latest package form of high-power IGBT. Compared with traditional soldered IGBT (Soldered IGBT Module), press-pack IGBT (Press-pack IGBT) uses pressure to achieve thermal and electrical connections, and ensures double-sided heat dissipation , with high reliability, it is considered as an ideal device for high-power applications and applications with large fluctuations in output power. It can meet the requirement...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/482H01L21/56
CPCH01L21/56H01L23/31H01L23/482
Inventor 武伟韩荣刚张喆李现兵石浩张朋唐新灵王亮林仲康田丽纷
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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