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Display device, array substrate, gate drive circuit, transistor and manufacturing method thereof

A gate drive circuit and array substrate technology, applied in circuits, identification devices, electrical solid devices, etc., can solve the problems of large damage to thin film transistors, affecting the normal output of driving signals, etc., to reduce the impact, eliminate short circuits, and reduce cutting. area effect

Inactive Publication Date: 2018-06-29
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method causes great damage to the thin film transistor and affects the normal output of the driving signal.

Method used

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  • Display device, array substrate, gate drive circuit, transistor and manufacturing method thereof
  • Display device, array substrate, gate drive circuit, transistor and manufacturing method thereof
  • Display device, array substrate, gate drive circuit, transistor and manufacturing method thereof

Examples

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Embodiment Construction

[0038] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0039] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the illustrated device is turned over so...

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PUM

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Abstract

The present invention discloses a display device, an array substrate, a gate drive circuit, a transistor and a manufacturing method thereof, and relates to the technical field of reality. The transistor is used for a gate drive circuit, and the gate drive circuit is arranged at a non-display area of an array substrate. The transistor comprises a gate layer, an active layer and a source and drain layer. The gate layer comprises a plurality of gate lines distributed in a first direction and connected to one another. The active layer is arranged on the gate layer. The source and drain layer is arranged on the active layer and comprises a plurality of source lines and a plurality of drain lines which are distributed at intervals in a second direction, the source lines are connected to one another, the drain lines are connected to one another, and the second direction is different from the first direction.

Description

technical field [0001] The present disclosure relates to the field of display technology, in particular, to a display device, an array substrate, a gate drive circuit, a transistor and a manufacturing method. Background technique [0002] Gate Driver on Array (GOA) is a driving technology for array substrates. The gate drive circuit can be directly manufactured in the non-display area of ​​the array substrate, thereby eliminating the need for an external gate drive circuit, and has the advantages of low cost, low power consumption, and narrow frame. Among them, the thin film transistor is an important component of the gate drive circuit. Such as figure 1 As shown, the thin film transistor in the existing gate drive circuit generally includes a gate layer 1a, an active layer 2a, and a source-drain layer arranged from bottom to top, wherein the gate layer 1a is a continuous and complete plane . The source-drain layer includes a plurality of source lines 3a and a plurality ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/01G09F9/33
CPCG09F9/33H01L27/124H01L27/1259
Inventor 冯艳荣方冲冯耀耀张晗张世举
Owner BOE TECH GRP CO LTD
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