Semiconductor device and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to avoid sticking and product failure problems, and avoid electrostatic effects

Active Publication Date: 2018-07-03
SHANGHAI IND U TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, the spring recovery force of the structure is greater than the bonding force of the surface energy, which can also avoid the situation of sticky failure, but it will directly affect the limit of sensor sensitivity and dynamic range design

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Effect test

Embodiment 1

[0063] Embodiment 1 of the present application provides a semiconductor device, figure 1 is a schematic diagram of the semiconductor device of this embodiment.

[0064] Such as figure 1 As shown, the semiconductor device may have an active end structure and a passive end structure, and the active end structure and the passive end structure can move relative to each other and contact each other.

[0065] In this example, if figure 1 As shown, at least one of the active end structure and the passive end structure has a cavity 1, and the cavity is formed as an accommodating space. The cavity can be surrounded by a bottom and an outer wall, and both the outer wall and the bottom are conductive. material, wherein the outer wall is the upper conductive layer in the figure, and the bottom is the lower conductive layer in the figure. Wherein, the outer wall protrudes in the direction of relative movement relative to the bottom, and the part where the active end structure and the pa...

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PUM

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Abstract

The application provides a semiconductor device and a manufacturing method thereof. The semiconductor device has a cavity formed by a conductive material. The cavity can buffer the acting force generated during contact between an active end structure and a passive end structure, and the conductive material can guide away the static electricity generated by the contact to avoid the electrostatic effect. Therefore, the problems of adhesion and product failure caused by touch and impact are avoided.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Miniaturized mechanical sensors developed and manufactured using semiconductor manufacturing processes, such as accelerometers, gyroscopes, oscillators, silicon wheat, pressure gauges, etc., are disturbed by external physical quantities, such as vibration, drop, impact, etc., the microstructure The movement of the body in the three-dimensional space will cause the deformation of the structure, and sometimes the surfaces of the structure will touch each other. [0003] Among them, when there are two or more microstructures that collide with each other and contact each other's surfaces, one of them is called the active end structure, and the other is called the passive end structure. Because in the microscopic scale, in addition to the frictional force generat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/043H01L21/48B81B7/02
CPCB81B7/02H01L21/4817H01L23/043H01L21/48
Inventor 梁凯智
Owner SHANGHAI IND U TECH RES INST
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