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semiconductor x-ray detector

An X-ray and detector technology, applied in the field of semiconductor X-ray detectors, can solve the problems of difficult and impossible production of detectors with large areas and a large number of pixels

Active Publication Date: 2019-03-05
SHENZHEN XPECTVISION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cumbersome thermal management required in existing semiconductor X-ray detectors (e.g., Medipix) can make detectors with large areas and large numbers of pixels difficult or impossible to produce

Method used

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  • semiconductor x-ray detector

Examples

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Embodiment Construction

[0063] Figure 1A A semiconductor X-ray detector 100 according to an embodiment is schematically shown. The semiconductor X-ray detector 100 may include an X-ray absorbing layer 110 and an electronic device layer 120 (eg, ASIC) for processing and analyzing electrical signals generated in the X-ray absorbing layer 110 by incident X-rays. In an embodiment, the semiconductor X-ray detector 100 does not include a scintillator. The X-ray absorbing layer 110 may include semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe or combinations thereof. Semiconductors can have high mass attenuation coefficients for x-ray energies of interest. The X-ray absorbing layer 110 may include one or more diodes (eg, p-i-n or p-n) formed from the first doped region 111 , one or more discrete regions 114 of the second doped region 113 . The second doped region 113 may be separated from the first doped region 111 by an (optional) intrinsic region 112 . The discrete portions 114 ar...

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Abstract

The device (100) for detecting X-rays comprises: an X-ray absorbing layer (110) including electrodes; a first voltage comparator (301) configured to compare the voltage of the electrodes with a first threshold (V1); Two voltage comparators (302) configured to compare the voltage with a second threshold (V2); a counter (320) configured to record the number of x-ray photons absorbed by the x-ray absorbing layer (110); a controller (310); the controller (310) is configured to initiate a time delay (TD1, TD2) from the first voltage comparator (301) determining the time at which the absolute value of said voltage equals or exceeds the absolute value of the first threshold (V1) , start the second voltage comparator (302) during the time delay (TD1, TD2), if during the time delay (TD1, TD2) the second voltage comparator (302) determines that the absolute value of the voltage is equal to or exceeds the second The absolute value of the threshold (V2) then causes the counter (320) to increment the number recorded by one.

Description

【Technical field】 [0001] The present disclosure relates to X-ray detectors, in particular to semiconductor X-ray detectors. 【Background technique】 [0002] An X-ray detector may be a device for measuring the flux, spatial distribution, spectral or other properties of X-rays. [0003] X-ray detectors are used in many applications. An important application is imaging. X-ray imaging is a radiographic technique and can be used to reveal the internal structure of inhomogeneously composed and opaque objects such as the human body. [0004] Early X-ray detectors used for imaging included photographic negatives and photographic film. The photographic negative can be a glass negative with an emulsion coating. Although photographic negatives have been replaced by photographic films, they are still used in special cases due to the superior qualities they offer and their extreme stability. A photographic film can be a plastic film (eg, a tape or sheet) with a photosensitive emulsio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/16G01T1/17G01T1/24G01N23/083A61B6/03
CPCG01T1/17G01T1/2928A61B6/4233G01T1/247G01N23/04G01N23/041A61B6/03G01V5/222A61B6/032A61B6/484G01N23/046G01T1/244G01T7/00G21K7/00
Inventor 曹培炎
Owner SHENZHEN XPECTVISION TECH CO LTD