Steady-state crystal growth device

Abstract

The invention discloses a steady-state crystal growth device and relates to the technical field of growth devices of crystals. Crystal growth can be carried out by various manners through the device.The first manner is as follows: a flow speed of a circulating melt keeps constant and the change of growth temperature is controlled through controlling power of a plurality of groups of circulating melt pre-heating heaters. The second manner is as follows: the power of the plurality of groups of circulating melt pre-heating heaters keeps constant and the change of the growth temperature is controlled through controlling the flow speed of the circulating melt. The third manner is as follows: the power of the plurality of groups of circulating melt pre-heating heaters is reduced; meanwhile, theflowing of the circulating melt in a circulating pump is accelerated to control the change of the growth temperature. The fourth manner is as follows: the flow speed of the circulating melt and the power of the circulating melt pre-heating heaters keep constant, and the temperature of a water cooling copper pipe is gradually reduced or the flow speed of cooling liquid in the water cooling copperpipe is gradually increased to control the change of the growth temperature. By adopting the device disclosed by the invention, the melt is not directly heated through the heaters so that a crystal growth process is stable and high-quality crystals are easy to prepare.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon preparation devices, in particular to a steady-state crystal growth device. Background technique [0002] Many semiconductor crystals, optical crystals and various functional crystals can be grown as single crystals by the melt method. These single crystal materials are widely used in the fields of laser, communication, navigation and radar. High-quality crystals are the basis for making excellent devices. The smaller the temperature gradient within the single crystal, the slower the growth rate, the smaller the mechanical vibration, and the higher the quality of the crystal. [0003] The usual crystal growth methods include pulling method, crucible descent method (vertical Bridgman method), vertical temperature gradient method, zone melting method, flame melting method, cold crucible condensation shell method, etc. Among them, the vertical temperature gradient method is an excel...

AI Technical Summary

Problems solved by technology

In fact, when controlling the heater to change the thermal field, it still faces the disturbance of the temperature field, so although it can prepare high-quality crystals, it is very difficult

Images