Bismuth sodium titanate based dielectric film with high energy storage density and its preparation method and application

A high energy storage density, bismuth sodium titanate-based technology, applied to fixed capacitor dielectrics, circuits, capacitors, etc., to achieve good temperature stability, high energy storage density, and simple production process

Active Publication Date: 2021-10-08
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(Y.Li, W.Chen, J.Zhou, Q.Xu, H.Sun and R.Xu, Dielectric and piezoelecrtic properties of lead-free (Na 0.5 Bi 0.5 )TiO 3 –NaNbO 3 ceramics, Mater.Sci.Eng: B 112 (2004) 5-9.) However, there are few reports on dielectric thin film materials with high energy storage density, high energy storage efficiency and good temperature stability

Method used

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  • Bismuth sodium titanate based dielectric film with high energy storage density and its preparation method and application
  • Bismuth sodium titanate based dielectric film with high energy storage density and its preparation method and application
  • Bismuth sodium titanate based dielectric film with high energy storage density and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0043] (1) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.05 stoichiometric ratio Weigh sodium acetate, potassium acetate, bismuth nitrate, strontium acetate dissolved in acetic acid, stirred and heated to boiling for 20 to 30 minutes to prepare solution A.

[0044] (2) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.05 stoichiometric ratio Weigh tetrabutyl titanate, and weigh a certain amount of acetylacetone, dissolve tetrabutyl titanate in ethylene glycol methyl ether, stir and heat to 50°C, stir for 20-30 minutes Solution B was prepared.

[0045] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at 50°C for 300 minutes to prepare Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 precursor solution.

[0046] (4) Pt / Ti / SiO 2 / Si substrate cut to a s...

Embodiment 2

[0053] (1) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.10 stoichiometric ratio Weigh sodium acetate, potassium acetate, bismuth nitrate, strontium acetate dissolved in acetic acid, stirred and heated to boiling for 20 to 30 minutes to prepare solution A.

[0054] (2) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , The stoichiometric ratio of x=0.10 Weigh tetrabutyl titanate, and weigh a certain amount of acetylacetone, dissolve tetrabutyl titanate in ethylene glycol methyl ether, stir and heat to 50°C, stir for 20-30 minutes Solution B was prepared.

[0055] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at 50°C for 300 minutes to prepare Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 precursor solution.

[0056] (4) Pt / Ti / SiO 2 / Si substrate cut t...

Embodiment 3

[0063] (1) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.15 stoichiometric ratio Weigh sodium acetate, potassium acetate, bismuth nitrate, strontium acetate dissolved in acetic acid, stirred and heated to boiling for 20 to 30 minutes to prepare solution A.

[0064] (2) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , The stoichiometric ratio of x=0.15 Weigh tetrabutyl titanate, and weigh a certain amount of acetylacetone, dissolve tetrabutyl titanate in ethylene glycol methyl ether, stir and heat to 50°C, stir for 20-30 minutes Solution B was prepared.

[0065] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at 50°C for 300 minutes to prepare Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 precursor solution.

[0066] (4) Pt / Ti / SiO 2 / Si substrate cut t...

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Abstract

The invention relates to a high energy storage density bismuth sodium titanate-based dielectric film and its preparation method and application, consisting of Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 ‑xSrZrO 3 , the preparation method is the sol-gel method, the precursor solution is configured according to the stoichiometric ratio, and then dropped into the cleaned Pt / Ti / SiO 2 / Spin coating on Si substrate, followed by heat treatment at 150°C-350°C-700°C, repeat the above spin coating and heat treatment process until the film thickness reaches 500-600nm, and the sputtering process can also be used on the thin film to prepare the metal upper electrode . Compared with the prior art, the high energy storage density film capacitor prepared by the present invention has excellent energy storage performance, and its energy storage density is 25J / cm 3 , the energy storage efficiency is 79.16%, and the temperature stability is good.

Description

technical field [0001] The invention belongs to the field of electronic functional materials and devices, and in particular relates to a bismuth sodium titanate-based dielectric film with high energy storage density and its preparation method and application. Background technique [0002] As the main passive energy storage device, dielectric capacitors have fast read charge and discharge rates and ultra-high power density, and are therefore widely used in electronic circuits, which can realize DC blocking, coupling, bypass, filtering, and tuning circuit, energy conversion and other functions. However, its development has encountered a bottleneck at present, and its energy storage density and energy storage efficiency are maintained at a low level. In addition, the temperature stability of current dielectric capacitors is poor. The current commercial dielectric energy storage density is only about 2J / cm 3 , compared with electrochemical capacitors or batteries, its energy s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/622H01G4/12
CPCC04B35/475C04B35/62218C04B2235/3201C04B2235/3213C04B2235/3232C04B2235/3244C04B2235/3298H01G4/1218
Inventor 翟继卫陈盼沈波
Owner TONGJI UNIV
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