Pre-sorting method for service life of insulated gate bipolar transistor

Abstract

The invention relates to a pre-sorting method for the service life of an insulated gate bipolar transistor, and relates to a detection method for a transistor. The method comprises the steps: A, searching an intersection point of crossing characteristic curves under different temperatures according to the crossing characteristics of an IGBT, and defining a drive voltage corresponding to the intersection point as a crossing point gate electrode voltage VCross; B, selecting a sample according to IGBT products of the selected batch, taking VCross as a drive voltage, carrying out the accelerated aging testing of the IGBTs, recording a short-circuit current in a module testing process through a short-circuit testing circuit, determining a function relation between the short-circuit current of the IGBT and the number of accelerated circulation times according to a testing result, and recording the number of accelerated circulation times when all bonding wires are broken; C: carrying out theaccelerated aging testing of a to-be-tested IGBT module for Ns times, calculating the remaining service life of the module through the built function relation between the short-circuit current of theIGBT and the number of accelerated circulation times after testing, and completing the screening of the module according to the specific requirements of the remaining service life. The method achievesthe purpose of deducing the remaining service life of the IGBT through a few of samples.

Description

Technical field [0001] The invention relates to a method for detecting transistors, in particular to a method for pre-sorting the service life of insulated gate bipolar transistors. Background technique [0002] Power semiconductor devices are the core components of modern power electronic conversion devices. With the continuous development of high-power power electronic technology, the performance requirements of modern industries on semiconductor devices are increasing day by day. Insulated Gate Bipolar Transistor (IGBT) has the advantages of both the high input impedance of MOSFET and the low on-voltage drop of GTR. It also has low voltage control power consumption, simple control circuit, high voltage resistance, and endurance. The characteristics of large current are widely used in high-power power electronic equipment. [0003] In IGBT industrial applications, because it works in a switching state, its service life is lower than that of passive components such as inductors ...

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Problems solved by technology

[0005] However, the life model established by the first type of research method does not involve the specific failure mechanism of the power IGBT, and does not consider the thermal fatigue failure caused by the temperature fluctuation inside the device in the actual working condition

On the other hand, this type of method is based on the same model of IGBT module parameters, and cannot realize the life prediction of a single module

The second type of method, that is, the accelerated aging test, although the complete life of the IGBT can be obtained more accurately, the modules that have passed the accelerated aging test have been scrapped and cannot be used in practical applications.

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