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A kind of semiconductor device and its manufacturing method and electronic device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of reducing the AC performance of the device, reducing the device yield rate, etc., to expand the area, improve the yield rate, and improve the AC performance effect

Active Publication Date: 2020-12-08
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The shared contact hole 101 of the SRAM overlaps to the middle of the gate structure 102. Even if the overlap is good, only half of the gate structure is connected. Therefore, the AC performance of the device is reduced, and the yield rate of the device is even reduced.

Method used

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  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] In order to solve the foregoing technical problems, the present invention provides a method for manufacturing a semiconductor device, such as image 3 As mentioned, it mainly includes the following steps:

[0076] Step S1, providing a semiconductor substrate, a first gate trench is formed on the semiconductor substrate, and a first source region and a first gate trench are provided in the semiconductor substrate on both sides of the first gate trench. drain area;

[0077] Step S2, forming an N-type work function layer on the bottom and lower side walls of the first gate trench;

[0078] Step S3, filling the first gate trench with a gate electrode layer to form a first metal gate structure;

[0079] Step S4, forming a shared contact hole, wherein the shared contact hole covers part of the surface of the first metal gate structure and part of the surface of the first drain region, or the shared contact hole covers part of the first drain region. A surface of a metal ga...

Embodiment 2

[0202] The present invention also provides a semiconductor device, which is prepared by the manufacturing method in the first embodiment above.

[0203] Refer below Figure 2I The structure of the semiconductor device of the present invention will be described in detail. Wherein, in this embodiment, a FinFET device is mainly taken as an example.

[0204] Specifically, as Figure 2I As shown, the semiconductor device of the present invention includes: a semiconductor substrate, the semiconductor substrate includes a PMOS device region, a first gate trench is formed on the semiconductor substrate of the PMOS device region, and the A first source region and a first drain region are disposed in the semiconductor substrate on both sides of the first gate trench.

[0205] Specifically, the semiconductor substrate 200 is a bulk silicon substrate, which may be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, InGaAs or other III / V Compound s...

Embodiment 3

[0250] The present invention also provides an electronic device, including the semiconductor device described in Embodiment 2, and the semiconductor device is prepared according to the method described in Embodiment 1.

[0251]The electronic device of this embodiment can be any electronic device such as a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a TV set, a VCD, a DVD, a navigator, a digital photo frame, a camera, a video camera, a recording pen, MP3, MP4, PSP, etc. Product or equipment, but also any intermediate product including electrical circuits. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

[0252] in, Figure 4 An example of a mobile phone handset is shown. The mobile phone handset 300 is provided with a display portion 302 included in a housing 301, operation buttons 303, an external connection port 304, a speaker 30...

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Abstract

The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The method includes: providing a semiconductor substrate, on which a first gate trench is formed, and in the first gate trench A first source region and a first drain region are arranged in the semiconductor substrate on both sides of the trench; an N-type work function layer is formed on the bottom and lower side walls of the first gate trench; filling the gate trench with a gate electrode layer to form a first metal gate structure; forming a shared contact hole, wherein the shared contact hole covers part of the surface of the first metal gate structure and part of the first drain region, or the shared contact hole covers part of the surface of the first metal gate structure and part of the surface of the first source region. The manufacturing method of the invention increases the contact area between the shared contact hole and the first metal gate structure, improves the AC performance of the device, and improves the yield rate of the device.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] As the dimensions of semiconductor devices continue to shrink, channel lengths become smaller and smaller, and metal gate trench filling becomes more and more challenging. If the trench filling is not good, the gate contact resistance will increase, which will reduce the AC (Alternating Current, AC) performance of the device, especially the self-aligned contact process. [0003] Currently, for devices with channel length less than 30nm, the W metal gate trench fill window becomes almost zero, no W is filled into the gate trench of PMOS devices, so the gate resistance becomes larger, which will increase the inverter (inverter) delay time (delay time). [0004] SRAM (Static Random Access Memory) is an indispensable part of any semiconductor logic process,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8244H01L27/11H01L21/336H01L29/78H01L29/423H01L21/28
CPCH01L29/4236H01L29/66477H01L29/78H01L21/28008H10B10/00H10B10/12
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP