Flip valve for semiconductor silicon single crystal furnace and single crystal furnace

A technology of silicon single crystal and flap valve, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., and can solve the problem of not being able to maintain the sealing effect

Pending Publication Date: 2018-08-28
南京晶能半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the problem with the flap valve in the prior art is that because the temperature of the main furnace chamber and the auxiliary furnace chamber in the single crystal furnace is very high, the flap valve will inevitably produce high-temperature deformation at high temperature, and obviously cannot maintain the initial state after deformation. sealing effect when

Method used

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  • Flip valve for semiconductor silicon single crystal furnace and single crystal furnace
  • Flip valve for semiconductor silicon single crystal furnace and single crystal furnace
  • Flip valve for semiconductor silicon single crystal furnace and single crystal furnace

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Embodiment 1 provides an embodiment of a flap valve used in a semiconductor silicon single crystal furnace.

[0026] Please combine Figure 1 to Figure 4 As shown, a flap valve for a semiconductor silicon single crystal furnace includes a flap 1 , a flap shaft 2 , and a connecting plate 3 connecting the flip shaft 2 and the flap 1 . The turning shaft 2 includes a shaft sleeve 21 , a first shaft body 22 inserted at one end of the shaft sleeve 21 , and a second shaft body 23 inserted at the other end of the shaft sleeve 21 . The first shaft body 22 , the second shaft body 23 and the shaft sleeve 21 are arranged coaxially. The central position of the turnover plate 1 is provided with a pair of seat bodies 12 protruding upwards, and a rotating shaft 13 is arranged horizontally between the seat bodies 12. One end of the connecting plate 3 is fixedly connected to the shaft sleeve 21 and the connecting plate 3 The other end is hinged to the seat body 12 through a rotating sh...

Embodiment 2

[0033] The second embodiment provides a single crystal furnace including the flap valve mentioned above.

[0034] The single crystal furnace also includes a cooling water source (not shown), the cooling water source is connected to the water inlet channel of the first shaft body and injects cooling water into the water inlet channel of the first shaft body, and the cooling water passes through the water inlet channel in turn , water inlet pipe, water inlet elbow, water channel, drainage elbow, drainage pipe, drainage channel, and then discharged, that is, the heat in the flap can be taken away by cooling water to cool the flap valve.

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PUM

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Abstract

The invention discloses a flip valve for a semiconductor silicon single crystal furnace. The flip valve comprises a flip plate, a flipping shaft and a connecting plate, wherein the connecting plate enables the flipping shaft to be connected to the flip plate. According to the flip valve, water channels are formed in the flip plate, cooling water can be introduced to flow in the water channels in the flip plate so as to take away heat of the flip plate, so that the cooling effect can be achieved, meanwhile, the cooling water are introduced into a water inlet channel and a water discharging channel from two shaft bodies in the flipping shaft, so that other pipeline structures do not need to be arranged any more, and the introduction of the cooling water can be realized by directly utilizingthe flipping shaft of the flip valve.

Description

technical field [0001] The invention relates to the technical field of silicon single crystal furnaces. Background technique [0002] Monocrystalline silicon is a crystal with a basically complete lattice structure. It is a good semiconductor material with a purity of more than 99.9999999%. It can be used in the production of diode-level, rectifier-level, circuit-level and solar cell-level single crystal products. And deep processing and manufacturing, its follow-up products integrated circuits and semiconductor separation devices have been widely used in various fields and are at the forefront of new material development. Semiconductor-grade silicon single crystal furnace is an important crystal growth equipment in the single crystal silicon industry chain. At present, there are two main methods for growing silicon single crystal in the world: one is the zone melting method, and the other is the Czochralski method. Among them, the Czochralski method has the advantages of h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/08
CPCC30B15/00C30B29/08
Inventor 潘清跃罗汉昌王维川
Owner 南京晶能半导体科技有限公司
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