Low-trigger bidirectional silicon-controlled electrostatic protection device with high maintenance voltage

Abstract

The invention discloses a low-trigger bidirectional silicon-controlled electrostatic protection device with a high maintenance voltage. The low-trigger bidirectional silicon-controlled electrostatic protection device comprises a P-type substrate, wherein an N deep pit is arranged is arranged in the P-type substrate, a first P well and a second P well are arranged in the N deep pit, a first P+ injection region, a second P+ injection region and a first N+ injection are arranged in the first P well, a second N+ injection region, a third P+ injection region and a fourth P+ injection region are arranged in the second P well, the second P+ injection region and the first N+ injection region are connected and are used as a positive electrode of the device, and the second N+ injection region and the third P+ injection region are connected and used as a negative electrode of the device. The low-trigger bidirectional silicon-controlled electrostatic protection device has the capability of bidirectional electrostatic discharging and can be simultaneously used for electrostatic protection of an input-output pin of an integrated circuit of which a signal level is lower than ground or higher thanthe ground, the device is enabled to have low trigger voltage and also has relatively high maintenance voltage on the premise that no extra area is expanded and the conduction capability of the device is not reduced, so that the device has favorable electrostatic discharge (ESD) window.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a low-trigger bidirectional thyristor electrostatic protection device with high sustain voltage. Background technique [0002] Electro-Static Discharge (ESD) is an inevitable phenomenon in the process of manufacturing, packaging, testing, transportation, assembly and use of integrated circuits. Static electricity accounts for 30% of the various reasons for the failure of integrated circuits, which poses a serious threat to the reliability of integrated circuits, and electrostatic protection devices can be turned on in time when ESD occurs, providing a parallel low-resistance circuit for the protected integrated circuits The discharge path allows the ESD pulse to pass through the electrostatic protection device, thereby preventing the integrated circuit from being damaged by ESD; in addition, after the ESD occurs, the electrostatic protection device can be turned off in tim...

AI Technical Summary

Problems solved by technology

but increasing R N深阱 The resistance value of the structure will inevitably increase the on-resistance after the structure is fully opened, which will affect the device's ability to discharge electrostatic current.

Images