Semiconductor element and device having same

Abstract

A semiconductor element, comprising a programmable memory array, including a plurality of memory cells disposed above a substrate, one of the memory cells includes: a gate disposed above the substrate; a conductive portion separated from the gate and a dielectric layer, contacting the conductive part and separated from the gate, the dielectric layer defines a threshold voltage of the memory cell, wherein at least two memory cells have different threshold voltages.

Description

technical field [0001] The present invention relates to a semiconductor device and a device including the semiconductor device, and in particular to a semiconductor device with a physically unclonable function (PUF) and a device including the semiconductor device. Background technique [0002] A physically unclonable function (PUF) is a hardware intrinsic security technology (hardware intrinsic security, HIS), which can generate a chip "fingerprint" to construct a security authentication mechanism. Applying PUF prevents physical attacks that attempt to steal digital information from the chip. Static Random-Access Memory (SRAM) is one of the common implementation aspects of PUF applications, which utilizes critical voltage differences in power supply states to generate chip identifiers. However, the structure of the SRAM PUF (including 6 transistors, for example) occupies a large size, which will affect the reduction of the size of the PUF array. Furthermore, SRAM PUF is ea...

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Problems solved by technology

However, the structure of SRAM PUF (for example, including 6 transistors) occupies a large size, which will affect the reduction of the size of the PUF array.

Furthermore, SRAM PUF is easily affected by environmental factors, for example, SRAM PUF is affected by temperature changes and voltage level changes (such as power supply voltage V DD ) is quite sensitive to interference caused by

The hamming distances between SRAM PUFs will increase with increasing temperature, resulting in an increase in the bit error rate (BER)

Therefore, although SRAM PUF can provide irregular and unique PUF applications, the lack of reliability due to the noise induced instability mentioned above is one of the main concerns of SRAM PUF applications

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