Unlock instant, AI-driven research and patent intelligence for your innovation.

Power supply driving device and random access memory

A random access memory, power-driven technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of driver current consumption, increase in driver current consumption, affecting the function of functional modules, etc., to reduce the current consumption, The effect of extending the on-time

Inactive Publication Date: 2018-09-21
CHANGXIN MEMORY TECH INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In random access memory, the power supply of functional modules is controlled by connecting transistors in series, but the number of transistors connected in series is generally large to meet the power requirements when the module is working, and a driver is required to control the opening and closing of transistors; the opening and closing of transistors, for the driver , with the charging and discharging of the transistor load, and the driver needs to consume current
When the functional modules are frequently switched between the leisure and working states in a short period of time, the transistors are also frequently turned on and off. Power requirements create a burden that affects the functionality of functional blocks

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power supply driving device and random access memory
  • Power supply driving device and random access memory
  • Power supply driving device and random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] A kind of power drive device for driving the function module in the random access memory of this embodiment, according to figure 1 with Figure 5 As shown, it includes a delay control circuit 110 , a driver 120 and a power drive module 130 .

[0048] The input terminal of the delay control circuit 110 is used as a control signal input terminal for receiving the first control signal, and the delay control circuit 110 is used for delaying the trigger edge of the input first control signal for a predetermined time to generate the first control signal. Two control signals.

[0049] The driver 120 includes a driving PMOS transistor 121 and a driving NMOS transistor 122, the source of the driving PMOS transistor 121 is connected to a power supply voltage; the drain of the driving PMOS transistor 121 is connected to the drain of the driving NMOS transistor 122 The first node 123, the source of the driving NMOS transistor 122 is grounded, the gate of the driving NMOS transist...

Embodiment 2

[0071] Based on embodiment one, refer to Figure 5 As shown, the input end of the power driving module 120 in this embodiment is connected to the low voltage end of the functional module 110, and the output end of the power driving module 120 is grounded.

[0072] In a specific embodiment, according to Figure 5 As shown, the power drive module 130 includes an array composed of a plurality of NMOS transistors 132, the delay control circuit 110 delays the rising edge of the input first control signal for a predetermined time, when the first control signal When the cycle time is less than the predetermined time, the second control signal does not generate a rising edge in a unit time, so that the third control signal does not generate a falling edge in a unit time.

[0073] The drains of the NMOS transistors 132 are all connected to the low-voltage end of the functional module 140, the sources of the NMOS transistors 132 are connected to the functional module 140, and the gates...

Embodiment 3

[0080] The random access memory of this embodiment includes the driver described in the third embodiment; wherein, the preset time is set according to the working sequence of the corresponding functional module 110 to delay the connection between the functional module 110 and the power supply connection The turn-on time of the power driving module 130 reduces the current consumed by the driver 130 when the MOS transistor is switched frequently.

[0081] In this embodiment, the conduction time of the power drive module 130 connected between the functional module 110 and the power supply is delayed, and when the working sequence of the functional module 110 is satisfied, an appropriate preset time for the delay is selected to prolong the power supply. The conduction time of the MOS tube connected between the functional module 100 and the power supply is used to reduce the current consumed by the driver 130 when the MOS tube in the power drive module 130 connected between the func...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a power supply driving device for driving a functional module in a random access memory as well as the random access memory. The random access memory comprises the power supplydriving device; the power supply driving device comprises a driver and a power supply driving module; the driver is connected with the functional module through the power supply driving module; the driver comprises a driving PMOS tube and a driving NMOS tube; and the driver is used for delaying the input first control system when the cycle time of the first control signal is less than the preset time to output without generating a second control signal of a trigger edge and output to the power supply driving module to generate a third control signal so as to delay the continuous conduction time of the power supply driving module in the random access memory and prolong the conduction time of the functional module. The current consumption of the driver when the driver is started frequently is reduced by prolonging the continuous conduction time of the power supply driving module in the random access memory.

Description

technical field [0001] The invention relates to a random access memory, in particular to a power drive device for driving a function module in the random access memory and the random access memory. Background technique [0002] In random access memory, the power supply of functional modules is controlled by connecting transistors in series, but the number of transistors connected in series is generally large to meet the power requirements when the module is working, and a driver is required to control the opening and closing of transistors; the opening and closing of transistors, for the driver , with the charging and discharging of the transistor load, and the driver needs to consume current. When the functional modules are frequently switched between the leisure and working states in a short period of time, the transistors are also frequently turned on and off. The power requirements create a burden that affects the functionality of the functional blocks. Contents of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/14G11C11/4074G11C11/413
CPCG11C5/148G11C11/4074G11C11/413
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC