Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of array copper oxide semiconductor sensor and its preparation method and application

A copper oxide and semiconductor technology, applied in the field of sensors, can solve problems such as performance differences, and achieve the effects of no waste water pollution, simple process, excellent conductivity and resistance to bending and breaking

Active Publication Date: 2020-06-09
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There have been many reports on the preparation of sensor elements by printing methods, but most of them are printed nanoparticle inks. Although there are a small number of reports on particle-free inks, and the reported semiconductor films obtained by sintering particle-free inks are mostly composed of particles. There are still differences from devices composed of fiber array structure oxide semiconductors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of array copper oxide semiconductor sensor and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] An array copper oxide semiconductor sensor and a preparation method thereof of the present invention specifically comprise the following steps:

[0040] Step 1: Synthesizing particle-free copper ink, the formula is 20wt% copper nitrate, 40wt% diethanolamine, 40wt% water;

[0041] Step 2: Screen-print the particle-free copper ink of step 1 onto the PET substrate according to a predetermined pattern;

[0042] Step 3: Carry out heat treatment in an air atmosphere, the heat treatment temperature is 130° C., and the heat treatment time is 5 minutes, to obtain a dense copper metal pattern on the substrate;

[0043] Step 4: Use the particle-free copper ink in step 1 to print it on the copper metal pattern in step 3 according to the predetermined pattern;

[0044] Step 5: Carry out heat treatment in an atmosphere with an oxygen partial pressure of 200kPa, the heat treatment temperature is 150°C, and the heat treatment time is 5 minutes, and a fiber array copper oxide semicondu...

Embodiment 2

[0046] An array copper oxide semiconductor sensor and a preparation method thereof of the present invention specifically comprise the following steps:

[0047] Step 1: Synthesizing particle-free copper ink, the formula is 30wt% copper oxide, 10wt% ethanolamine, 20wt% 1,3-butylene diamine, 30wt% ethanol and 10wt% polyvinylpyrrolidone;

[0048] Step 2: Print the particle-free copper ink in step 1 onto the glass substrate according to a predetermined pattern;

[0049] Step 3: Carry out heat treatment in an air atmosphere, the heat treatment temperature is 150°C, and the heat treatment time is 1min, to obtain a dense copper metal pattern on the substrate;

[0050] Step 4: Use the particle-free copper ink in step 1 to print it on the copper metal pattern in step 3 according to the predetermined pattern;

[0051] Step 5: Carry out heat treatment in an atmosphere with an oxygen partial pressure of 150kPa, the heat treatment temperature is 400°C, and the heat treatment time is 20 minut...

Embodiment 3

[0053] An array copper oxide semiconductor sensor and a preparation method thereof of the present invention specifically comprise the following steps:

[0054] Step 1: Synthesize particle-free copper ink with the formula of 10wt% copper formate, 5wt% copper acetate and 5wt% copper oxide, 10wt% ethylenediamine, 9wt% methylamine, 51wt% ethylene glycol ether and 10wt% hydroxymethyl cellulose white;

[0055] Step 2: Inkjet print the particle-free copper ink of step 1 onto the PI substrate according to a predetermined pattern;

[0056] Step 3: Carry out heat treatment in an air atmosphere, the heat treatment temperature is 400°C, and the heat treatment time is 0.1min, to obtain a dense copper metal pattern on the substrate;

[0057] Step 4: Use the particle-free copper ink in step 1 to print it on the copper metal pattern in step 3 according to the predetermined pattern;

[0058] Step 5: Carry out heat treatment in an atmosphere with an oxygen partial pressure of 102kPa, the heat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
viscosityaaaaaaaaaa
surface tensionaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses an array copper oxide semiconductor sensor and a preparation method. According to the method, conductive layer pattern printing is performed on a substrate by using no-particlecopper ink, then the special patterns for growth of copper oxide are printed on the conductive layer after thermal treatment, and growth of the metal oxide fiber array is realized on the patterns forgrowth of the copper oxide through thermal treatment so that printing of the semiconductor layer patterns can be realized. According to the method, pattern printing can be performed on the surface ofthe flexible substrate and the non-planar complex substrate without the mask plate, the proportion of the copper oxide and the cuprous oxide and the dimension and the density of the fibers in the metal oxide fiber array can be regulated and controlled by controlling the thermal treatment condition, and interface bonding between the generated copper oxide and the metal copper (the conductive layerpatterns for growth of the copper oxide) is great so as to have great advantages in the aspect of wearable equipment and flexible electronics.

Description

technical field [0001] The invention relates to an array copper oxide semiconductor sensor, a preparation method and application thereof, and belongs to the technical field of sensors. Background technique [0002] Metal oxide semiconductors will have conductivity changes in special sound, light, heat and atmosphere environments, so they are often used in gas-sensitive, humidity-sensitive, light-sensitive and other sensors. Semiconductors with nanofiber array structures have attracted extensive attention due to their advantages such as high electronic conductivity, surface activity, and large specific surface area. At present, methods such as chemical vapor deposition and electrospinning are mostly used to prepare fiber array semiconductors, which require expensive equipment, and masks are also required when applied to integrated devices. [0003] In recent years, inkjet printing has attracted attention for its advantages of no mask, non-contact, direct printing, less steps...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/12H05K1/09H01L21/02G01D5/16
CPCC09D11/52G01D5/16H01L21/02623H01L21/02664H05K1/092H05K3/1216H05K3/1241H05K3/1275H05K3/1283
Inventor 林锦新林智杰黄婷婷赵超前
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI