Copper metal interconnection electromigration test structure and test method thereof

Abstract

The invention discloses a copper metal interconnection electromigration test structure which comprises a horizontally arranged metal wire. The metal wire comprises a number of upper metal layers whichare horizontally arranged on the upper layer of the metal wire, a number of lower metal layers which are horizontally arranged on the lower layer of the metal wire, a number of upper metal layer connection through holes which are connected with the upper metal layers and the metal wire respectively, a number of lower metal layer connection through holes which are connected with the lower metal layers and the metal wire respectively, a number of connection wires and a number of metal plates. One end of each connection wire is connected with an upper metal layer or a lower metal layer. The invention further provides a test method of the copper metal interconnection electromigration test structure. The test structure which is designed according to the test result of the copper metal interconnection electromigration test structure provided by the invention conforms to a manufacturing process. The effect of the through hole cutting process of the upper end of the metal wire on a back-end metal interconnection structure is well monitored. A barrier layer or back-end copper metal interconnection process can be improved. The risk of mass production of a product is reduced.

Description

technical field [0001] The invention relates to a semiconductor copper metal layer test structure, in particular to a copper metal interconnect electromigration test structure and a test method thereof. Background technique [0002] With the development of technology nodes, electromigration has become an important reliability focus of metal interconnections in integrated circuits. In a typical electromigration evaluation, there are two structures, including such as figure 1 The test electronics downstream (downstream) with such as figure 2 The test electronic upstream situation (upstream) to assess the electromigration metal line or via (via) failure mode and life prediction. From the perspective of electromigration failure, generally, trench voids and via voids on the metal line under test will appear in the test structure of the upstream test electronics; ) test structures generally appear void beneath via and trench voids on the metal line under test, and all voids are...

AI Technical Summary

Problems solved by technology

Therefore, the commonly used EMupstream structure has certain limitations

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