Radio-frequency low-noise amplifier

Abstract

The invention provides a radio-frequency low-noise amplifier, which comprises a transistor, wherein the transistor comprises a substrate, a grid electrode route located on the substrate, a grid electrode, a source electrode, a drain electrode and an isolation layer; the grid electrode is electrically connected with a radio-frequency signal input end through the grid electrode route; the isolationlayer is located between the substrate and the grid electrode route; and the isolation layer is electrically connected with the source electrode. As the isolation layer is located between the substrate and the grid electrode route, the isolation layer can isolate noise of the substrate, so as to avoid the grid electrode route from introducing the noise of the substrate into the grid electrode; andfurthermore, as the isolation layer is electrically connected with the source electrode, a stray capacitor between the isolation layer and the grid electrode route cannot affect input impedance matching and gain of the radio-frequency low-noise amplifier,.

Description

technical field [0001] The present invention relates to the technical field of low-noise amplifiers, and more specifically, relates to a radio-frequency low-noise amplifier. Background technique [0002] A radio frequency low noise amplifier is an amplifier with a very low noise figure. It is generally used as a high-frequency or intermediate-frequency preamplifier for various radio receivers, and an amplifying circuit for high-sensitivity electronic detection equipment. In the case of amplifying weak signals, the noise of the amplifier itself may seriously interfere with the signal, so it is desirable to reduce this noise to improve the output signal-to-noise ratio. An existing radio frequency low noise amplifier such as figure 1 As shown, it includes a field effect transistor, which includes a substrate, a gate G on the substrate, a source S and a drain D, and the gate G is connected to the signal input terminal IN through a gate line. Since the gate trace is directly a...

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Problems solved by technology

[0003] In view of this, the present invention provides a radio frequency low noise amplifier to solve the problem that the parasitic capacitance between the gate line and the substrate in the existing radio frequency low noise amplifier introduces the noise of the substrate into the gate, resulting in low radio frequency noise Amplifier noise figure problem

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