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Epitaxial growth apparatus and holding member

A technology for epitaxial growth and holding components, which is applied in the field of epitaxial growth devices and holding components, and can solve problems such as dust generation, unstable temperature distribution of the substrate, and unstable tilt of lift pins, etc.

Active Publication Date: 2022-07-19
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a lift pin made of graphite is used, there is a problem that the inclination of the lift pin is unstable due to the influence of the difference in thermal expansion coefficient between it and the arm made of quartz. If the lift pin is made of quartz, Since its absorbance is different from that of a base made of graphite, there is a problem that the temperature of the lift pin is lower than that of the base, and the temperature distribution of the substrate is unstable
In addition, whenever the substrate is placed on the susceptor, the susceptor and the lifting ring come into contact, generating dust, and as a result, there is also a problem of a large amount of particles adhering to the substrate.

Method used

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  • Epitaxial growth apparatus and holding member
  • Epitaxial growth apparatus and holding member
  • Epitaxial growth apparatus and holding member

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0075] In order to confirm the effect of the present invention, the experiments given below were carried out. In the following description, an Example and a comparative example are given, and this invention is demonstrated concretely, but they do not constitute limitation of this invention.

[0076] Example

[0077] A substrate W and a vapor phase growth apparatus 1 of a silicon single crystal substrate having a diameter of 300 mm are prepared. Using the prepared substrate W and the vapor phase growth apparatus 1, the substrate W is placed in the pocket portion 3a of the susceptor 3 of the vapor phase growth apparatus 1. An epitaxial layer is grown on the placed substrate W to manufacture an epitaxial wafer. Next, from the film thickness distribution of the outer peripheral portion of the epitaxial layer of the epitaxial wafer, the distance that the center of the substrate W of the epitaxial wafer deviates from the center C of the pocket portion 3a is measured and used as the...

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PUM

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Abstract

The vapor phase growth device (1) comprises a base (3); a lift pin (5) and a support ring (6). The base (3) has a through hole (3b) penetrating the front and back surfaces, and is capable of rotating around an axis (O). The lift pins (5) are inserted into the through holes (3b). The support ring (6) includes a ring portion (6a) and a plate-shaped member (6b), and between the ring portion (6a) and the plate-shaped member (6b), the lift pins (5) are sandwiched and held. The ring portion (6a) is located around the axis (O). The plate-like member (6b) includes a connecting portion (6b1) connected to the ring portion (6a), extends from the connecting portion (6b1) along the ring portion (6a), and takes the connecting portion (6b1) as a base point, and applies a force toward the ring portion (6b1). 6a) force. Thereby, an epitaxial growth apparatus and a holding member provided with the holding member capable of holding the lift pin by maintaining the positional relationship with the lift pin are provided.

Description

technical field [0001] The present invention relates to an epitaxial growth apparatus and a holding member. Background technique [0002] A common monolithic outlying growth device includes, for example, a susceptor made of silicon carbide-coated graphite and in the shape of a disk; The support shaft of the base is made of quartz. The susceptor in the reactor includes a pocket on which the substrate is placed, and through holes penetrating the front and back of the pocket. In addition, the support shaft has a strut portion extending from the lower side of the base toward the back surface of the base, and an arm portion extending from a tip end portion of the strut portion so as to pass through the base. The way below the hole connects with the back of the base. The arm portion is formed with a through hole penetrating the arm portion in the same direction as the through hole of the base below the through hole of the base. In the through holes formed in the base and the a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/44C23C16/458H01L21/683
CPCC23C16/44C23C16/458H01L21/67115H01L21/68742H01L21/68757H01L21/68764H01L21/68785H01L21/68792H01L21/67017H01L21/683H01L21/68721
Inventor 小林武史
Owner SHIN-ETSU HANDOTAI CO LTD