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Method for processing a semiconductor workpiece and semiconductor device

A technology for semiconductors and workpieces, which is used in the field of processing semiconductor workpieces and semiconductor devices, and can solve problems such as complex processing processes and costs

Active Publication Date: 2018-10-09
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can often lead to complex and complex processing where planarization has to be taken into account, in particular when the planarization plane reaches the main processing surface of the semiconductor workpiece, for example for the formation of trench structures within the semiconductor workpiece or the like process

Method used

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  • Method for processing a semiconductor workpiece and semiconductor device
  • Method for processing a semiconductor workpiece and semiconductor device
  • Method for processing a semiconductor workpiece and semiconductor device

Examples

Experimental program
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Effect test

example 1

[0170] Example 1 is a method 100 for processing a semiconductor workpiece 202, wherein the method includes forming a trench structure 214 in a first region 202a of the semiconductor workpiece, wherein the trench structure extends from a surface 202s of the semiconductor workpiece to the semiconductor workpiece In the workpiece down to the first depth 215; laterally beside the first region, at least one recess 224 is formed in the second region 202b of the semiconductor workpiece, wherein the at least one recess extends from the surface 202s of the semiconductor workpiece into the semiconductor workpiece until less than The second depth 225 of the first depth; applying at least one material layer 230 on the semiconductor workpiece, wherein the at least one material layer fills the trench structure 214 and the at least one recess 224 and covers the semiconductor workpiece in the first region and the surface 202s in the second region; planarize the semiconductor workpiece 202 so a...

example 26

[0195] Example 26 is a semiconductor device 900, 1000 comprising the following: a trench structure 214 in the first region 202a of the semiconductor workpiece 202, wherein the trench structure 214 comprises a plurality of trenches 214t, in the plurality of trenches 214t Each trench of the semiconductor workpiece 202 extends from the surface 202s of the semiconductor workpiece 202 into the semiconductor workpiece to a first depth 215 and has a first width 211; laterally beside the first region 202a in the second region 202b of the semiconductor workpiece 202 at least a recess 224, wherein the at least one recess 224 extends from the surface 202s of the semiconductor workpiece 202 into the semiconductor workpiece with a second depth 225 less than the first depth 215 and with a second width 221 greater than the first width 211; and at least one Material layers 240a, 240b, 850a, 850b arranged in the plurality of grooves 214t and the at least one recess 224, wherein a section of the...

example 50

[0219] Example 50 is a semiconductor device 900 comprising the following: a first region 202a and a second region 202b disposed in a semiconductor workpiece 202 laterally alongside the first region, wherein the first region 202a defines the semiconductor workpiece a planar surface level 205 of the semiconductor workpiece 202; a power semiconductor structure 900a arranged in the first region 202a, wherein the power semiconductor structure 900a comprises a trench structure 214 extending from the planar surface level 205 of the semiconductor workpiece 202 into the semiconductor workpiece and arranged in The edge stop structure 900b in the second region 202b of the semiconductor workpiece 202, wherein the edge stop structure 900b comprises a dielectric section 222d arranged in the surface region of the semiconductor workpiece 202 and at least one recess 224 in the dielectric section 222d, wherein the The at least one recess 224 extends from the planar surface level 205 into the sem...

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PUM

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Abstract

A method for processing a semiconductor workpiece, including forming a trench structure in a first region of a semiconductor workpiece, extending from a surface of the semiconductor workpiece to a first depth, forming at least one recess in a second region of the semiconductor workpiece laterally next to the first region, the recess extending from the surface of the semiconductor workpiece into the semiconductor workpiece to a second depth less than the first depth; forming a material layer over the semiconductor workpiece, the material layer filling the trench structure and recess and covering the surface of the semiconductor workpiece in the first region and in the second region; and planarizing the semiconductor workpiece to partially remove the material layer in the first region and inthe second region, wherein the material layer remains in the trench structure and in the at least one recess.

Description

technical field [0001] In general, the various embodiments relate to methods and semiconductor devices for processing semiconductor workpieces. Background technique [0002] In general, a variety of different processes may be used in the semiconductor industry to process semiconductor workpieces, for example for the manufacture of semiconductor devices. Semiconductor workpieces such as chips, wafers or any other suitable substrates may be processed by layer building, structuring, doping, annealing and the like. For forming or machining the trench structure, for example a chemical mechanical polishing process (CMP process) or any other suitable process can be used in order to planarize the surface of the semiconductor workpiece. Such a planarization can be integrated into the process with difficulty since, for example, all structures extending above the planarization plane are removed during the planarization. This can often lead to complex and complex processing where plan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02H01L21/67005H01L29/401H01L29/735H01L29/7811H01L29/7815H01L29/861H01L29/66734H01L29/7804H01L29/7805H01L29/7813H01L29/407H01L27/0255H01L29/88H01L28/24H01L29/7396H01L29/7397H01L29/404H01L29/0619H01L29/0615H01L29/4238H01L29/66348H01L29/0623H01L29/4236H01L29/7393H01L29/7801H01L23/34H01L29/7455
Inventor A.卡尔莫斯
Owner INFINEON TECH AG