A chip-type high-voltage silicon stack and its production process

Abstract

The invention discloses a patch type high-voltage silicon stack and a producing process thereof. The patch type high-voltage silicon stack comprises a high-voltage silicon stack body and a protectingmechanism. Two tungsten electrodes are arranged, electrode leads are welded to one sides of the tungsten electrodes, a tube core is formed by connecting a plurality of chips in series, and the tungsten electrodes are welded at the two corresponding ends of the tube core. The tube core is sleeved with a protecting cover, the tungsten electrodes are located at the centers of the two corresponding ends of two corresponding sides of the protecting cover, and inserting rods are bonded at the positions, located at the two corresponding ends of the tungsten electrodes, of the two corresponding sidesof the protecting cover. The protecting mechanism is composed of a right fixing plate, a left fixing plate, cubic fixing blocks, buffering rods, pull rods, connecting rods, cubic fixing grooves, sliding grooves, first through holes, first reset springs, clamping blocks, inserting grooves, lead grooves, a buffering plate, second through holes, second reset springs and a sponge mat. The high-voltagesilicon stack can protect the electrode leads and prevent the electrode leads from being damaged during transportation.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to a chip-type high-voltage silicon stack and a production process thereof. Background technique [0002] The high-voltage silicon stack is also called a silicon column. It is a silicon high-frequency high-voltage rectifier diode with an operating voltage of several thousand volts to tens of thousands of volts. It is often used for high-frequency and high-voltage rectification in black and white TV sets or other electronic instruments. The reason why it can withstand such a high voltage is that its interior is composed of several silicon high-frequency diode cores connected in series. , The outside is packaged with high-frequency ceramics. [0003] However, there is no protective mechanism on the body of the general high-voltage silicon stack. Since the electrode leads are welded on the body of the high-voltage silicon stack, it is easy to be bent during transportation, resulting in...

AI Technical Summary

Problems solved by technology

[0003] However, there is no protective mechanism on the body of the general high-voltage silicon stack. Since the electrode leads are welded on the body of the high-voltage silicon stack, it is easy to be bent during transportation, resulting in damage to the electrode leads. Chip-type high-voltage silicon stack and its production process to solve the protection problem of electrode leads, improve its service life, and help prevent electrode leads from being bent and damaged during transportation

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