Metal electrode forming method for detector

Abstract

The invention discloses a metal electrode forming method for a detector. The method comprises the steps of providing a detector structure, wherein a sensitive material layer pattern is formed on the surface of the detector structure; depositing a metal layer on a sensitive material layer, and covering the surface and the step side wall of the sensitive material layer pattern and an area out of thepattern; forming a photoresist pattern on the metal layer, and exposing the area of the metal layer surface on which a metal electrode pattern needs to be formed; forming a metal oxide layer patternon the exposed metal layer surface; removing the photoresist pattern; and taking the metal oxide layer pattern as a mask, and removing the metal layer material out of the metal oxide layer pattern coverage area, thereby forming a metal electrode. According to the method, a technology of the metal electrode of the detector is easy to control and realize.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits and detectors, and more specifically, to a method for forming metal electrodes of detectors applied in MEMS technology. Background technique [0002] Micro-electro-mechanical systems (MEMS) technology has been widely used in many fields including the field of infrared detection technology due to its many advantages such as small, intelligent, executable, integrable, good process compatibility, and low cost. Infrared detector is a MEMS product that is widely used in the field of infrared detection technology. It uses a sensitive material detection layer (usually amorphous silicon or vanadium oxide) to absorb infrared rays and convert the absorbed infrared rays into electrical signals to achieve thermal detection. Imaging function, the thermal imaging function enables infrared detectors to be used in the safety detection of power networks, the detection of forest fires, and...

AI Technical Summary

Problems solved by technology

However, when using photoresist such as DUV for wet process, it is often debonded due to adhesion problems

And if a layer of hard mask is used, first pattern the hard mask, then remove the glue and then pattern the thin metal, due to the O used in the glue removal process 2 Plasma will oxidize the thin metal surface in the exposed area, forming a layer of metal oxide on the thin metal surface, and metal oxide is difficult to remove by wet process, so this process is difficult to control and realize

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