Quantum well light-emitting layer and light-emitting diode and preparation method thereof

Abstract

The invention discloses a preparation method of a quantum well light-emitting layer. The method comprises the step of preparing a multi-quantum well structure through repeating the following steps S1-S2 of: S1 growing an In<x>Ga<1-x>N quantum well layer; and S2 growing a quantum barrier layer on the quantum well layer, including the steps of S21 growing a first GaN layer on the quantum well layer,S22 growing a first Si-doped GaN layer on the first GaN layer in the processes of reducing temperature and increasing hydrogen flow, wherein the temperature is reduced to T2 from T1 and the hydrogenflow is increased to R2 from R1, S23 maintaining constant temperature T2 and constant hydrogen flow R2 and growing an In-doped GaN layer on the Si-doped GaN layer; S24 growing a second Si-doped GaN layer on the In-doped GaN layer in the processes of increasing the temperature and reducing the hydrogen flow, wherein the temperature is increased to T1 from T2 and the hydrogen flow is reduced to R1 from R2; and S25 growing a second GaN layer on the second Si-doped GaN layer. The invention further discloses the quantum well light-emitting layer, a light-emitting diode and a preparation method of the light-emitting diode.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a quantum well light-emitting layer, a light-emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (Light Emitting Diode) is an electronic component that can emit light. It has the advantages of high efficiency, low power consumption, small size, long life, and high reliability. At present, it has the most potential to replace the electronic components of traditional light sources, thus rapidly realizing commercialization. At present, GaN-based blue-green light-emitting diodes are more common in the market, and the light-emitting area adopts InGaN / GaN multi-quantum well structure. The traditional GaN-based epitaxial wafer growth method is to grow the first semiconductor layer, multi-quantum well layer and second on the substrate layer sequentially. Two semiconductor layers. The multi-quantum well layer is the main ligh...

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Problems solved by technology

[0003] Based on this, it is necessary to provide a quantum well light-emitting layer and a light-emitting diode and a preparation method thereof for the problem of poor lattice quality of the multi-quantum well layer

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