Internal power generation circuit in reference current generation circuit
A technology for generating circuits and internal power supplies, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., to achieve the effect of simplifying circuit structure, saving manufacturing costs, and saving branch currents
Inactive Publication Date: 2018-10-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0012] The disadvantage of the above-mentioned internal power generation circuit is that two current branches are required
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[0023] combine figure 2 As shown, the internal power generating circuit in the improved reference current generating circuit in the following embodiments is composed of three PMOS transistors, five NMOS transistors and one resistor.
[0024] The source and substrate of the PMOS transistor MP2 are connected to the power supply voltage terminal VPWR. One end of the resistor R1 is connected to the power supply voltage terminal VPWR, and the other end of the resistor R1 is connected to the source of the PMOS transistor MP3.
[0025] The gate and drain of the PMOS transistor MP2 are connected to the gate of the PMOS transistor MP3 and the drain of the NMOS transistor MN7. The drain of the PMOS transistor MP3 is connected to the gate and drain of the NMOS transistor MN9 and the gate of the NMOS transistor MN11.
[0026] The source of NMOS transistor MN9 is connected to the source of PMOS transistor MP4, and the drain and gate of PMOS transistor MP4 are connected to the gates of N...
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The invention discloses an internal power generation circuit in a reference current generation circuit, a source electrode and a substrate of a first PMOS transistor, wherein one end of a first resistor is connected with a VPWR; the other end of the first resistor is connected with the source electrode of a second PMOS transistor; the grid electrode and the electrode of the first PMOS transistor are connected with the grid electrode of the second PMOS transistor, and the drain electrode of a first NMOS transistor, and the drain electrode of the second PMOS transistor is connected with the gridelectrode and the drain electrode of a third NMOS transistor and the grid electrode of a fifth NMOS transistor; the source electrode of the third NMOS transistor is connected with the source electrode of a third PMOS transistor, and the drain electrode and the grid electrode of the third PMOS transistor are connected with the grid electrode of the first NMOS transistor, the grid electrode of thesecond NMOS transistor and the grid electrode of the fourth NMOS transistor; the drain electrode of the fifth NMOS transistor is connected to the power supply voltage terminal VPWR, and the source electrode of the fifth NMOS transistor is connected to the drain of the fifth NMOS transistor of the fourth NMOS transistor. The internal power generation circuit in a reference current generation circuit can simplify the circuit structure and save the cost.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to an internal power generation circuit in a reference current generation circuit. Background technique [0002] Internal power supply (or digital power supply) is often used in high-voltage (1.8-5.5V) analog circuits to drive basic digital circuits to reduce power supply voltage influence or dynamic power consumption or timing deviation. [0003] There are two ways of generating internal power supply: closed loop (feedback) and open loop. Among them, the open-loop method is relatively simple to implement and widely used. combine figure 1 As shown, the traditional open-loop internal power generating circuit can be realized by using two current branches, and the internal power generated by the internal power generating circuit VPWRI=Vgsp1+Vgsn3+Vgsn4-Vgsn6. Among them, Vgsp1 is the gate-source voltage difference of PMOS transistor MP1, Vgsn3 is the gate-source volt...
Claims
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IPC IPC(8): G05F1/56
Inventor 袁志勇
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP