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Chemical mechanical grinding device

A technology of chemical machinery and equipment, applied in the field of chemical mechanical grinding equipment, can solve problems such as easy splitting on the polishing pad, chip scratches, and affecting product yield

Inactive Publication Date: 2018-10-23
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Wherein, the grinding head is the main part of chemical mechanical polishing equipment, wherein the periphery of the substrate in the grinding head is usually provided with a retaining ring (retaining ring), wherein the retaining ring is usually made of high-performance thermoplastic resin and stainless steel components. The adhesive is bonded together, but due to the continuous impact of high temperature and chemical corrosion during the chemical mechanical polishing process, once the adhesive is damaged, it is easy to split on the polishing pad, causing scratches on the chip and affecting product yield.

Method used

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  • Chemical mechanical grinding device
  • Chemical mechanical grinding device
  • Chemical mechanical grinding device

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Below, refer to figure 1 as well as figure 2 An example of a chemical mechanical polishing device proposed in an embodiment of the present invention will be described. in, figure 1 is a schematic structural view of a polishing head of a chemical mechanical polishing device according to an embodiment of the present invention; figure 2 is a schematic structural diagram of a positioning ring of a chemical mechanical polishing device according to an embodiment of the present invention.

[0031] In the manufacturing process of integrated circuits, various layer structures such as semiconductor layers, conductive layers, and oxide layers are usually deposited sequentially on a silicon wafer. After each layer is deposited, an etching process may be required to form the desired pattern to form the circuit elements. The etching process can lead to uneven or non-uniform surfaces of the deposited layers, which can create defects during subsequent process steps. Therefore, i...

Embodiment 2

[0051] As an alternative to Embodiment 1, the following in conjunction with the attached figure 1 And attached image 3 for further clarification.

[0052] Among them such as figure 1 As shown, the grinding head has a grinding head body 102, and a space for loading and fixing wafers to be ground is formed inside the grinding head body, for example, the space is a groove structure. The grinding head body can rotate, and the grinding head body can move up and down. For example, a shaft structure 104 is arranged in the center of the upper part to realize the rotation and up and down movement of the grinding head. The specific rotation and movement methods are here No limit.

[0053] Optionally, a through hole for pressure adjustment may also be provided on the grinding head to communicate with the pressure adjustment mechanism.

[0054] The grinding head body is connected to a concentric disk-shaped bracket through a diaphragm.

[0055] Wherein, the polishing head body is ma...

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PUM

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Abstract

The invention relates to a chemical mechanical grinding device. The chemical mechanical grinding device comprises at least a grinding head, wherein the grinding head comprises a positioning ring for fixing a grinding device, wherein the positioning ring comprises a main body structure, and a positioning structure which is positioned on the main body structure and is integrated with the main body structure by adhering; a protruded part and a sunken part which are matched with each other in a clamping sleeving manner are formed between the main body structure and the positioning structure. According to the chemical mechanical grinding device, the main body structure and the positioning structure can be clamped and sleeved through the protruded part and the sunken part, and the stability is maintained under pressure in each direction; the problem of layering and adhesive cracking can be effectively prevented; and the risk that a chip of a CMP stand can be greatly prevented from scratchingwhich influences the product yield is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to chemical mechanical grinding equipment. Background technique [0002] Chemical mechanical polishing is a commonly used method to achieve global planarization of the surface, which is a processing technology that combines chemical corrosion and mechanical removal. In the existing chemical mechanical polishing method, the substrate is generally clamped on the grinding head, and a certain pressure is applied to the substrate through the grinding head, so that it is driven by the grinding head to rotate on the grinding disc for grinding. [0003] Wherein, the grinding head is the main part of chemical mechanical polishing equipment, wherein the periphery of the substrate in the grinding head is usually provided with a retaining ring (retaining ring), wherein the retaining ring is usually made of high-performance thermoplastic resin and stainless steel components. The adhesive...

Claims

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Application Information

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IPC IPC(8): B24B37/32B24B37/30
CPCB24B37/30B24B37/32
Inventor 杨宝斌
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP