Gas mixing structure, process chamber and semiconductor processing equipment

Abstract

The invention provides a gas mixing structure. The gas mixing structure is used for providing gas for a chamber and comprises multiple gas inlet pipelines and at least one gas outlet pipeline. The multiple gas inlet pipelines and multiple gas sources are in one-to-one correspondence connection, and the gas outlet pipeline is connected with a gas inlet of the chamber. A mixing cavity is further included and has a gas mixing space, and the mixing cavity is connected with the gas inlet pipelines and the gas outlet pipeline and is used for enabling gas of the multiple gas sources to be mixed in the gas mixing space and then output to the gas inlet of the chamber through the gas outlet pipeline. The invention further provides the process chamber and a semiconductor processing equipment. According to the gas mixing structure, the process chamber and the semiconductor processing equipment, the gas can be mixed to be uniform, and the pipelines cannot be blocked.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics processing, and specifically relates to a gas mixing structure, a process chamber and semiconductor processing equipment. Background technique [0002] LED PECVD equipment is mainly used to deposit and coat the surface of sapphire or silicon wafers, and deposit SiN / SiO on the surface of the wafer. The specific process is: usually SiH 4 With N 2 After O and other gases are mixed in proportions, they are passed into the reaction chamber, and then RF voltage is applied to initiate igniting excitation to form plasma, and finally SiN / SiO film is deposited on the wafer. It should be emphasized that gas mixing is one of the key steps before the LED PECVD reaction. Whether the gas mixing is sufficient will also determine whether the entire furnace film thickness and refractive index uniformity in a single furnace batch meet the requirements. [0003] figure 1 For a structural schematic diagram of a gas...

AI Technical Summary

Problems solved by technology

[0006] First, use figure 1 In the gas mixing structure shown, because the gas mixing pipeline is short, the gas is mixed unevenly in a very short pipeline

[0007] Second, use figure 2 The mixed gas structure shown, the relative figure 1 Although the length of the gas mixing pipeline has improved to a certain extent the problem of uneven gas mixing, it is easy to generate deposits and block the pipeline when mixing in a long pipeline.

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