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A kind of large-size single crystal stannous oxide and its preparation method

A stannous oxide, large-size technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult to prepare single crystal SnO, achieve regular shape, simple operation, and improve performance

Active Publication Date: 2021-05-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to prepare single crystal SnO with a size larger than 100 μm by existing technologies.

Method used

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  • A kind of large-size single crystal stannous oxide and its preparation method
  • A kind of large-size single crystal stannous oxide and its preparation method
  • A kind of large-size single crystal stannous oxide and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) SnCl 2 2H 2 O as a precursor was dissolved in 30 mL of dilute hydrochloric acid. where SnCl 2 2H 2 O purity is 98%, weighed SnCl 2 2H 2 The mass of O is 1.3825g, ensuring that [Sn 2+ ] = 0.17M. The concentration of hydrochloric acid is 0.16mol / L, so that the pH value of the solution is 0.8.

[0024] (2) Add NaOH dropwise to the solution of step (1), so that the pH of the solution rises to 11.8, and stir while adding NaOH solution dropwise, producing white sol substance Sn 6 o 4 (OH) 4 .

[0025] (3) The solution of step (2) was ultrasonically treated for 3h at room temperature to obtain a black precipitate; the resulting solution was centrifuged at 8000r / min for 10min, and the gained black precipitate was washed three times with ethanol and deionized water successively until Remove NaCl and other impurities, and vacuum filter to obtain large-size single crystal SnO.

[0026] The scanning electron microscope (SEM) of the large-size single crystal SnO obta...

Embodiment 2

[0029] (1) SnCl 2 2H 2 O as a precursor was dissolved in 30 mL of dilute hydrochloric acid. where SnCl 2 2H 2 O purity is 98%, weighed SnCl 2 2H 2 The mass of O is 1.3825g, ensuring that [Sn 2+ ] = 0.17M. The concentration of hydrochloric acid is 0.16mol / L, so that the pH value of the solution is 0.8.

[0030] (2) Add NaOH dropwise to the solution of step (1), so that the pH of the solution rises to 11.8, and stir while adding NaOH solution dropwise, producing white sol substance Sn 6 o 4 (OH) 4 .

[0031] (3) Heating the solution of step (2) on a heating platform at a temperature of 90°C to obtain a black precipitate; the resulting solution was centrifuged at 8000r / min for 10min, and the resulting black precipitate was washed with ethanol and deionized water successively Washing three times until NaCl and other impurities are removed, vacuum filtration to obtain large-size single crystal SnO.

[0032] The X-ray diffraction pattern (XRD) of the large-size single cr...

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Abstract

The invention belongs to the field of semiconductor devices, and discloses a large-size single-crystal tin oxide and a preparation method thereof. SnCl 2 2H 2 O was dissolved in the acid solution, and then the alkaline solution was added dropwise to adjust the pH value of the solution to a range of 11.5-12.5 to form a white sol substance Sn 6 o 4 (OH) 4 , and then ultrasonic treatment or heat treatment to obtain a black precipitate, which is separated, washed and dried to obtain the large-size single-crystal stannous oxide. The present invention uses the acid-base neutralization reaction mechanism to prepare large-size single crystal SnO. The preparation method of the present invention is simple to operate, and the required raw materials and equipment have no special requirements; and the prepared single crystal SnO has large size and regular shape, which can effectively improve Performance of Field Effect Transistors.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a large-size single-crystal tin oxide and a preparation method thereof. Background technique [0002] Field-Effect Transistor (FET for short) is a semiconductor device widely used in displays, and is mostly used as an important component of active matrix liquid crystal display (AMLCD) and active matrix organic light emitting diode (AMOLED) pixel circuits. element. [0003] Field effect transistors can be divided into two categories: junction field effect transistor (JFET) and insulated gate field effect transistor (JGFET). SemiconductorField-Effect Transistor, referred to as MOSFET), it can be divided into NPN type and PNP type. The NPN type is usually called the N-channel type, and the PNP type is also called the P-channel type. For the P-channel field effect transistor, its source and drain are connected to the P-type semiconductor. Generally, the input curre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/34H01L29/24
CPCH01L29/24H01L29/66969
Inventor 宁洪龙邓培淼谢伟广姚日晖周尚雄何锐辉章红科邓宇熹卢宽宽彭俊彪
Owner SOUTH CHINA UNIV OF TECH