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QLED device, display device and manufacturing method thereof

A device and mesoporous material technology, applied in the field of QLED devices, display devices and their preparation, can solve the problems of low luminous efficiency, difficult to effectively control the thickness of the device, and high production cost, and achieve the improvement of luminous efficiency, reduction of control costs, and simple method. easy-to-control effects

Active Publication Date: 2018-11-13
TCL CORPORATION
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Problems solved by technology

[0005] The purpose of the present invention is to provide a QLED device, a display device and a preparation method thereof, aiming to solve the problems of low luminous efficiency, difficult effective control of device thickness and high production cost existing in existing QLED devices

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  • QLED device, display device and manufacturing method thereof
  • QLED device, display device and manufacturing method thereof
  • QLED device, display device and manufacturing method thereof

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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0019] combine Figure 1-Figure 3 , the embodiment of the present invention provides a QLED, such as figure 1 As shown, it includes a substrate 1, a bottom electrode 2, a quantum dot luminescent layer 3 and a top electrode 4 arranged in sequence. The quantum dot luminescent layer 3 is composed of a mesoporous material 31 and an electrolyte 32 filled in the pores of the mesoporous material 31 and luminescent quantum dots. 33 components (see figure 2 or image 3 ), wherein, the conductivity of the electrolyte 32 ≥ 0.01scm -1 .

[0020] In the embodiment of the present invention, the QLED device...

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Abstract

The invention belongs to the technical field of display applications, and provides a QLED device, a display device and a manufacturing method thereof. A quantum dot light-emitting layer of the QLED device provided by the invention shields a local electric field which the quantum dot should bear under an electroluminescence condition by using an electrolyte with electric conductivity >=0.01 scm<-1>to fully fill pores of a mesoporous material, so as to improve luminous efficiency and service life of the device. On the other hand, addition of the electrolyte also makes thickness of a luminescentlayer no longer limited by own low electric conductivity, and the thickness can reach 100 nanometers or even hundreds of nanometers, reducing control cost of the thickness. Effective microcavity length of the device is close to an integral multiple of half wavelength of the emitted light, so that the device can effectively use microcavity effect to further improve luminous efficiency.

Description

technical field [0001] The invention belongs to the field of display application technology, and in particular relates to a QLED device, a display device and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diode (QLED) has the advantages of high color purity, thinness and flexibility, and can be prepared by solution method. It is a next-generation display technology with high expectations. [0003] Currently, a QLED device generally includes a bottom electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a top electrode arranged in sequence. Wherein, the hole injection layer and the hole transport layer are used to provide movable holes from the external circuit to the light-emitting layer, and the electron transport layer is used to provide movable electrons. The electron-holes form excitons in the quantum dots of the light-emitting layer, and the...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56H01L27/32
CPCH10K59/00H10K50/115H10K71/00
Inventor 陈崧曹蔚然杨一行向超宇钱磊
Owner TCL CORPORATION
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