Chemical vapor deposition device

A technology of chemical vapor deposition and gas distribution pipes, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of limited contact area between gas and substrate, low deposition efficiency, difficult access to substrate and reaction products, etc. problems, to achieve the effect of improving safety performance and environmental protection, increasing the reaction area, and facilitating pick-and-place

Active Publication Date: 2018-11-23
JINHUA VOCATIONAL TECH COLLEGE
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing chemical vapor deposition is carried out by a deposition device. During the deposition, the contact area between the gas and the substrate is limited, so the deposition efficiency is low, and it is not easy to take and release the substrate and the reaction product.

Method used

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Embodiment Construction

[0030] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0031] Such as Figure 1-Figure 5 As shown, a chemical vapor deposition device according to the present invention includes an inlet pipe 1, an air distribution pipe 2, a reaction box 3, a substrate holder 4, a locking mechanism 5, a sealing mechanism 6, a rotating mechanism 7, a heater 8 and Exhaust gas treatment mechanism 9, the top of the reaction box 3 is provided with an air inlet pipe 1, and the air inlet pipe 1 communicates with the reaction box 3 through the air distribution pipe 2; the inside of the reaction box 3 is provided with a substrate holder 4 , and the bottom of the substrate rack 4 is connected to the rotating mechanism 7 for driving the substrate rack 4 to rotate; the side of the rotating mechanism 7 is fixed with a sealing mech...

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Abstract

The invention relates to the field of vapor deposition, in particular to a chemical vapor deposition device. According to the chemical vapor deposition device, a gas distribution pipe and a substrateframe are additionally arranged, so that reaction gas enters the device in a dispersed manner, in addition, the falling form of the gas is consistent with the substrate frame, so that the contact between the gas and a substrate is more sufficient, and therefore the reaction efficiency is improved; the substrate frame is rotated through a rotating mechanism when the reaction is carried out, the rotating substrate frame can stir the gas inside a reaction box so as to promote the reaction, and meanwhile the reaction area between the gas and the substrate can be increased; the substrate can be picked and placed through the movement of a sealing mechanism, so that the substrate and a reaction product can be picked and placed conveniently, meanwhile, the sealing performance is good, and the operation is flexible and convenient; and the generated reaction gas is treated through a tail gas treatment mechanism, generated tail gas is preliminarily purified, and therefore the damage to the environment and human bodies of operators is reduced, and the deposition safety performance and the environmental protection performance are improved.

Description

technical field [0001] The invention relates to the field of vapor deposition, in particular to a chemical vapor deposition device. Background technique [0002] Chemical vapor deposition is a chemical technology. This technology mainly uses one or several gas phase compounds or simple substances containing thin film elements to perform chemical reactions on the surface of the substrate to form thin films; A new technology developed to prepare inorganic materials; chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single crystal, polycrystalline or glassy inorganic thin film materials. [0003] The existing chemical vapor deposition is carried out by a deposition device, and the contact area between the gas and the substrate is limited during the deposition, so the deposition efficiency is low, and it is not easy to take and release the substrate and the reaction product. In view of this, the invention provides a c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/458C23C16/455
CPCC23C16/4409C23C16/4412C23C16/45565C23C16/4584C23C16/4586
Inventor 陆挚译
Owner JINHUA VOCATIONAL TECH COLLEGE
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