Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A znmgo UV detector

A technology of ultraviolet detectors and thin film layers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the crystal quality of the thin film and the comprehensive performance of the device, and achieve easy control of the reaction process, steep absorption cut-off edge, and crystal quality. high effect

Active Publication Date: 2020-05-12
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] When the proportion of Mg component in the ZnMgO film material is high, its band gap is relatively high, and the material has a cubic phase structure, while when the proportion of Mg component is low, its band gap is relatively low, and the material is in a hexagonal phase structure. structure, but when its band gap is in the sun-blind region, the composition ratio of Mg is roughly close to that of Zn, and the material may be phase-separated, which affects the crystal quality of the film and the overall performance of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A znmgo UV detector
  • A znmgo UV detector
  • A znmgo UV detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] 1.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the size is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0058] 1.2 Put the sapphire substrate in 1.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 150mL / min. The carrier gas flow rate of the zinc-based pipeline was 15mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 50mL / min.

[0059] 1.3 After growing for 2 hours, turn off the organic source, lower the temperature at a cooling rate of 5°C / min, and finally lower it to room temperature, ta...

Embodiment 2

[0065] In order to test the influence of the flow rate of oxygen on the device preparation, only the flow rate of oxygen was changed, and other conditions were the same as in Example 1, and a series of ultraviolet light detection devices were obtained. Oxygen flow rate is 750mL / min, 1350mL / min, 1850mL / min.

[0066] figure 2 It is the ultraviolet-visible light absorption spectrum of the ZnMgO thin film layer. It can be seen from the figure that with the change of the oxygen flow rate, the light absorption cut-off edge of the ZnMgO thin film layer does not change, and is located near 230nm.

[0067] The photoresponse of the ZnMgO ultraviolet detector that obtains in embodiment 2 is detected, obtains its photoresponse spectrum such as image 3 As shown, it can be seen from the figure that the photoresponse cut-off edge of devices prepared under different oxygen flow conditions has changed significantly, from 350nm to around 275nm.

Embodiment 3

[0069] 3.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the size is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0070] 3.2 Put the sapphire substrate in 3.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 150mL / min. The carrier gas flow rate of the zinc-based pipeline was 15mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 80mL / min.

[0071] 3.3 After growing for 2 hours, turn off the organic source, lower the temperature at a cooling rate of 5°C / min, and finally lower it to room temperature, ta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a ZnMgO ultraviolet detector, comprising: a ZnMgO thin film layer; the crystal structure of the ZnMgO thin film layer is a cubic phase; the ZnMgO thin film layer is prepared according to the following method: an organic zinc compound is used as a zinc source, and an organic magnesium compound As a magnesium source, a ZnMgO thin film layer is grown in a metal organic compound chemical vapor deposition equipment fed with oxygen. Compared with the prior art, the present invention uses metal organic compound chemical vapor deposition method to prepare ZnMgO thin film, its gas flow is parallel to the substrate, and the growth temperature is lower, so that the prepared ZnMgO thin film layer has high crystal quality and no phase separation , the absorption cut-off edge is steep, etc., so that the ultraviolet detector containing the ZnMgO thin film layer has better light effect ability, and the light response cut-off edge of the device can be adjusted without adjusting the light absorption cut-off edge of the ZnMgO thin film layer, and the preparation process is simple , the reaction process is easy to control.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, in particular to a ZnMgO ultraviolet detector. Background technique [0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and can be used in missile early warning, etc., so it has received widespread attention. [0003] The ultraviolet detectors that have been put into commercial use mainly include silicon detectors, photomul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/036H01L31/101
CPCH01L31/0296H01L31/036H01L31/101
Inventor 陈星刘可为李炳辉张振中申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com