A znmgo UV detector

Abstract

The invention provides a ZnMgO ultraviolet detector, comprising: a ZnMgO thin film layer; the crystal structure of the ZnMgO thin film layer is a cubic phase; the ZnMgO thin film layer is prepared according to the following method: an organic zinc compound is used as a zinc source, and an organic magnesium compound As a magnesium source, a ZnMgO thin film layer is grown in a metal organic compound chemical vapor deposition equipment fed with oxygen. Compared with the prior art, the present invention uses metal organic compound chemical vapor deposition method to prepare ZnMgO thin film, its gas flow is parallel to the substrate, and the growth temperature is lower, so that the prepared ZnMgO thin film layer has high crystal quality and no phase separation , the absorption cut-off edge is steep, etc., so that the ultraviolet detector containing the ZnMgO thin film layer has better light effect ability, and the light response cut-off edge of the device can be adjusted without adjusting the light absorption cut-off edge of the ZnMgO thin film layer, and the preparation process is simple , the reaction process is easy to control.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor photodetectors, in particular to a ZnMgO ultraviolet detector. Background technique

[0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and can be used in missile early warning, etc., so it has received widespread attention.

[0003] The ultraviolet detectors that have been put into commercial use mainly include silicon detectors, photomul...

Examples

Embodiment 1

[0057] 1.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the size is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0058] 1.2 Put the sapphire substrate in 1.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 150mL / min. The carrier gas flow rate of the zinc-based pipeline was 15mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 50mL / min.

[0059] 1.3 After growing for 2 hours, turn off the organic source, lower the temperature at a cooling rate of 5°C / min, and finally lower it to room temperature, ta...

Embodiment 2

[0065] In order to test the influence of the flow rate of oxygen on the device preparation, only the flow rate of oxygen was changed, and other conditions were the same as in Example 1, and a series of ultraviolet light detection devices were obtained. Oxygen flow rate is 750mL / min, 1350mL / min, 1850mL / min.

[0066] figure 2 It is the ultraviolet-visible light absorption spectrum of the ZnMgO thin film layer. It can be seen from the figure that with the change of the oxygen flow rate, the light absorption cut-off edge of the ZnMgO thin film layer does not change, and is located near 230nm.

[0067] The photoresponse of the ZnMgO ultraviolet detector that obtains in embodiment 2 is detected, obtains its photoresponse spectrum such as image 3 As shown, it can be seen from the figure that the photoresponse cut-off edge of devices prepared under different oxygen flow conditions has changed significantly, from 350nm to around 275nm.

Embodiment 3

[0069] 3.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the size is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0070] 3.2 Put the sapphire substrate in 3.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 150mL / min. The carrier gas flow rate of the zinc-based pipeline was 15mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 80mL / min.

[0071] 3.3 After growing for 2 hours, turn off the organic source, lower the temperature at a cooling rate of 5°C / min, and finally lower it to room temperature, ta...

technical field

[0001] The invention belongs to the technical field of semiconductor photodetectors, in particular to a ZnMgO ultraviolet detector. Background technique

[0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and can be used in missile early warning, etc., so it has received widespread attention.

[0003] The ultraviolet detectors that have been put into commercial use mainly include silicon detectors, photomul...

Examples

Embodiment 1

[0057] 1.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the size is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0058] 1.2 Put the sapphire substrate in 1.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 150mL / min. The carrier gas flow rate of the zinc-based pipeline was 15mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 50mL / min.

[0059] 1.3 After growing for 2 hours, turn off the organic source, lower the temperature at a cooling rate of 5°C / min, and finally lower it to room temperature, ta...

Embodiment 2

[0065] In order to test the influence of the flow rate of oxygen on the device preparation, only the flow rate of oxygen was changed, and other conditions were the same as in Example 1, and a series of ultraviolet light detection devices were obtained. Oxygen flow rate is 750mL / min, 1350mL / min, 1850mL / min.

[0066] figure 2 It is the ultraviolet-visible light absorption spectrum of the ZnMgO thin film layer. It can be seen from the figure that with the change of the oxygen flow rate, the light absorption cut-off edge of the ZnMgO thin film layer does not change, and is located near 230nm.

[0067] The photoresponse of the ZnMgO ultraviolet detector that obtains in embodiment 2 is detected, obtains its photoresponse spectrum such as image 3 As shown, it can be seen from the figure that the photoresponse cut-off edge of devices prepared under different oxygen flow conditions has changed significantly, from 350nm to around 275nm.

Embodiment 3

[0069] 3.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the size is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0070] 3.2 Put the sapphire substrate in 3.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 150mL / min. The carrier gas flow rate of the zinc-based pipeline was 15mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 80mL / min.

[0071] 3.3 After growing for 2 hours, turn off the organic source, lower the temperature at a cooling rate of 5°C / min, and finally lower it to room temperature, ta...

Images