ZnMgO ultraviolet detector

A technology of ultraviolet detectors and thin-film layers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting the crystal quality of thin films and the comprehensive performance of devices, and achieve easy control of the reaction process, simple preparation process, and good light effects effect of ability

Active Publication Date: 2018-11-30
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] When the proportion of Mg component in the ZnMgO film material is high, its band gap is relatively high, and the material has a cubic phase structure, while when the proportion of Mg component is low, its band gap is relatively low, and the material is in a hexagonal phase structure. structure, but when its band gap is in the sun-blind region, the composition ratio of Mg is roughly close to that of Zn, and the material may be phase-separated, which affects the crystal quality of the film and the overall performance of the device.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] 1.1 Use trichloroethylene, acetone, and ethanol to clean the sapphire substrate, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the scale is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0058] 1.2 Put the sapphire substrate in 1.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, use diethylzinc as the zinc source, dimethylmagnesocene as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted with different high-purity nitrogen carrier gas ratios, the flow rate of oxygen is 150mL / min, diethyl The carrier gas flow rate of the base zinc pipeline is 15mL / min, and the carrier gas flow rate of the dimethylmagnesocene pipeline is 50mL / min.

[0059] 1.3 Grow for 2 hours, turn off the organic source, reduce the temperature at a cooling rate of 5°C / min, and finally reduce to room temperature, take out the substrate, and...

Embodiment 2

[0065] In order to examine the influence of the oxygen flow rate on the preparation of the device, only the oxygen flow rate was changed, and the other conditions were the same as in Example 1, and a series of ultraviolet light detection devices were obtained. The oxygen flow rates are 750 mL / min, 1350 mL / min, and 1850 mL / min.

[0066] figure 2 It is the ultraviolet-visible light absorption spectrum of the ZnMgO film layer. It can be seen from the figure that with the change of the oxygen flow rate, the light absorption cut-off edge of the ZnMgO film layer does not change, and they are all located near 230nm.

[0067] The light response of the ZnMgO ultraviolet detector obtained in Example 2 was detected, and the light response spectrum was obtained as image 3 As shown, it can be seen from the figure that the light response cut-off edge of the devices prepared under different oxygen flow conditions has changed significantly, from 350nm to around 275nm.

Embodiment 3

[0069] 3.1 Use trichloroethylene, acetone, and ethanol to clean the sapphire substrate, and then dry it with dry nitrogen. (The thickness of the substrate is 0.45~0.55mm, the scale is 2 inches, and the square is about 5-10mm×5-10mm after cutting)

[0070] 3.2 Put the sapphire substrate in 3.1 into the MOCVD growth equipment, adjust the growth temperature to 450°C, and the vacuum degree of the growth chamber to 1×10 4 Pa, use diethylzinc as the zinc source, dimethylmagnesocene as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted with different high-purity nitrogen carrier gas ratios, the flow rate of oxygen is 150mL / min, diethyl The carrier gas flow rate of the base zinc pipeline is 15mL / min, and the carrier gas flow rate of the dimethylmagnesocene pipeline is 80mL / min.

[0071] 3.3 Grow for 2 hours, turn off the organic source, reduce the temperature at a cooling rate of 5°C / min, and finally reduce to room temperature, take out the substrate, and...

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Abstract

The invention provides a ZnMgO ultraviolet detector, which comprises a ZnMgO thin film layer, wherein a crystal structure of the ZnMgO thin film layer is a cubic phase; the ZnMgO thin film layer is aprepared according to the following method of growing the ZnMgO thin film layer in metal organic compound chemical vapor deposition equipment into which oxygen is introduced by employing an organic zinc compound as a zinc source and an organic magnesium compound as a magnesium source. Compared with the prior art, the ZnMgO ultraviolet detector has the advantages that a ZnMgO thin film is preparedby using a metal organic compound chemical vapor deposition method, the airflow of the ZnMgO thin film is parallel to a substrate and the growth temperature is relatively low, so that the prepared ZnMgO thin film layer has the characteristics of being high in crystal quality, free of phase separation and steep in absorption cutoff edge, the ultraviolet detector comprising the ZnMgO thin film layerhas relatively good light effect capacity, a light response cutoff edge of a device can be adjusted without adjusting the light absorption cutoff edge of the ZnMgO thin film layer, the preparation process is simple and the reaction process is easy to control.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, and particularly relates to a ZnMgO ultraviolet detector. Background technique [0002] Ultraviolet detection technology can be used in military communications, missile plume detection, fire warning, environmental monitoring, biological effects, etc. It has a wide range of applications both in military and civilian use. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface. This ultraviolet band is vividly called the solar blind band. Solar-blind ultraviolet detectors working in this band are not interfered by solar radiation, have higher sensitivity, and can be used for missile early warning, etc., so they have received widespread attention. [0003] The UV detectors that have been put into commercial use mainly include silicon detectors, photomultiplier tubes and semiconductor detec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/036H01L31/101
CPCH01L31/0296H01L31/036H01L31/101
Inventor 陈星刘可为李炳辉张振中申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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