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Flip-chip light-emitting diode and manufacturing method thereof

A light-emitting diode and flip-chip technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as damage, structural complexity, and high thermal resistance

Inactive Publication Date: 2019-10-15
黄秀璋
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal resistance in this heat conduction path is relatively high, which cannot achieve the best heat dissipation effect.
In addition, since the above-mentioned structure contains many components, its structural complexity makes it difficult to reduce its manufacturing cost.
[0004] In addition, the known flip-chip LED structure generally adopts a stacked structure, and the LED chip is stacked on the circuit substrate formed by solder, copper foil of wire, insulating ink, metal or ceramic substrate body. Since the thermal expansion coefficients between the LED chip and the solder, solder and wire copper foil, etc. that are in contact with each other are different from each other, when the heat generated by the LED chip due to light is transferred through this stacked structure, the clip The components in the middle of the stacked structure need to bear the deformation caused by the thermal expansion of the components at the upper and lower positions with different thermal expansion coefficients, and then it is easy to deform and cause damage, falling off, etc.

Method used

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  • Flip-chip light-emitting diode and manufacturing method thereof
  • Flip-chip light-emitting diode and manufacturing method thereof
  • Flip-chip light-emitting diode and manufacturing method thereof

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Embodiment Construction

[0039] figure 1 A flip chip light emitting diode according to an embodiment of the invention is shown. Such as figure 1 As shown, the flip-chip LED 1 includes a LED chip 10 having an anode 11 and a cathode 12 , a first metal sheet 21 , a second metal sheet 22 , a packaging material 30 , a conductive portion 40 and an insulating layer 50 .

[0040] Furthermore, the light emitting diode chip 10, the first metal sheet 21 and the second metal sheet 21 are packaged in the encapsulation material 30, and the positive electrode 11 and the negative electrode 12 of the light emitting diode chip 10, the first metal sheet 21 and the second metal sheet 22 are electrically insulated from each other. Each of the positive electrode 11 , the negative electrode 12 , the first metal sheet 21 and the second metal sheet 22 has a surface exposed from a surface 300 of the packaging material 30 . The conductive portion 40 is provided to electrically connect the first metal sheet 21 and the second ...

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PUM

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Abstract

The invention relates to a flip-chip type light emitting diode and a manufacturing method thereof. The flip-chip type light emitting diode comprises a light emitting diode chip having a positive electrode and a negative electrode, a first metal piece, a second metal piece, an encapsulating material, a conductive portion, and an insulating layer. The light emitting diode chip, the first metal pieceand the second metal piece are encapsulated in the encapsulating material, the positive electrode and the negative electrode of the light emitting diode chip, the first metal piece and the second metal piece are insulated from one another, and each of the positive electrode and the negative electrode of the light emitting diode chip, the first metal piece and the second metal piece has a surfaceexposed from the surface of the encapsulating material. The conductive portion is configured to make the first metal piece electrically connected with the positive electrode and make the second metalpiece electrically connected with the negative electrode in a state of maintaining insulation between the positive electrode and the negative electrode. The insulating layer is arranged on the surfaceof the encapsulating material, so as to cover the conductive portion and the positive electrode, the negative electrode, the first metal piece and the second metal piece which are exposed from the surface of the encapsulating material.

Description

technical field [0001] The invention relates to a flip-chip light-emitting diode and its manufacturing method, in particular to a flip-chip light-emitting diode with simple structure and capable of reducing the influence of heat and its manufacturing method. Background technique [0002] In the prior art, light-emitting diodes (LEDs) have been widely used as light sources due to their higher luminous efficiency and lower energy consumption compared with traditional light sources (eg, incandescent lamps, etc.). In practical applications, a light emitting device using a light emitting diode as a light source is usually formed by a plurality of light emitting diodes assembled on the same substrate in series or in parallel. However, when multiple LEDs generate light, a large amount of heat will be generated, especially when multiple LEDs are assembled on the same substrate with high density, if the heat accumulates on the substrate, it cannot be effectively If the ground is div...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/52H01L33/62
Inventor 黄秀璋
Owner 黄秀璋