A Miniaturized Bandstop Frequency Selective Surface
A frequency-selective surface, band-stop technology, applied in waveguide-type devices, circuits, electrical components, etc., can solve the problem of low degree of miniaturization, and achieve the effect of reducing size, increasing inductance and capacitance, and improving the effect of miniaturization
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Embodiment 1
[0021] refer to figure 1 , a miniaturized band-stop frequency selective surface, the frequency selective surface unit includes a first dielectric substrate 1 and a second dielectric substrate 2 stacked up and down; between the first dielectric substrate 1 and the second dielectric substrate 2 , a third dielectric substrate 4 is provided, and the three dielectric substrates form a stacked structure arranged from top to bottom.
[0022] The upper surface of the first dielectric substrate 1 and the lower surface of the second dielectric substrate 2 are respectively printed with two first split metal rings 3 with opposite openings, and the two first split metal rings 3 on the same dielectric plate surface The distances from the four open ends of the four open ends to the center lines of one group of opposite sides on the surface of the dielectric board and the center lines of the other group of opposite sides are equal, wherein the two first open metal rings 3 on the second dielec...
Embodiment 2
[0032] Embodiment 2, this embodiment has the same structure as Embodiment 1, only the following parameters have been adjusted:
[0033] The first dielectric substrate 1, the third dielectric substrate 4 and the second dielectric substrate 2 all adopt the length of t=6mm, the thickness of h=1mm, the corresponding opening ends of the two first open metal rings 3 on the same dielectric substrate plate surface The distance between them is d=0.4mm, the length is p=5.8mm, the line width is w=0.1mm, and the line width of the second split metal ring 5 is 0.1mm.
Embodiment 3
[0034] Embodiment 3, the structure of this embodiment is the same as that of Embodiment 1, only the following parameters have been adjusted:
[0035] The first dielectric substrate 1, the third dielectric substrate 4 and the second dielectric substrate 2 all use the corresponding openings of the two first open metal rings 3 on the same dielectric substrate plate surface with a length of t=4.6mm and a thickness of h=0.5mm. The distance between the ends is d=1.5mm, the length is p=4.4mm, the line width is w=0.6mm, and the line width of the second open metal ring 5 is 0.6mm.
[0036] Below by simulation experiment, the technical effect of the present invention is described further:
[0037] 1. Simulation conditions and simulation content:
[0038] The simulation uses commercial software HFSS_15.0;
[0039] Simulation 1, the transmission coefficient curve of the TE wave in the embodiment 1 of the present invention is simulated from the incidence angle 0 ° ~ 70 °, and the results...
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