3d pipe forming method
A pipeline, 3D technology, applied in the direction of coating, microstructure device, microstructure technology, etc., can solve the problems of limiting the total length of the pipeline, limiting the design and function of MEMS devices, etc., to achieve the effect of increasing the total length
Active Publication Date: 2020-12-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0003] However, the metal pipeline structure formed in this way is a two-dimensional structure, and the two-dimensional plane limits the total length of the pipeline that can be designed, thereby limiting the design and function of MEMS devices.
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[0037] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0038] As mentioned in the background technology, when using the CMOS process to manufacture semiconductor devices, since the adjacent interlayer dielectric layers are separated by the metal layer, they are not connected, so the existing metal pipes for local interconnection are two-dimensional The two-dimensional plane limits the total length of the pipeline that can be designed. If the 3D pipeline connection can be realized, the total length of the pipeline can be greatly increased to achieve more functions.
[...
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A 3D pipe for method is provided, comprising preparing a first groove for in a first dielectric layer; forming a first metal layer on a bottom wall and a side wall of the first groove to obtain a first cavity; forming a second metal layer on the first dielectric layer to cover the first cavity; Etching the second metal layer on top of the first cavity to form a second cavity and expose the first cavity; forming a second dielectric layer on the second metal layer; and forming a second groove in the second dielectric layer, the second groove communicating with the second cavity. By forming a first cavity and a second cavity, the second groove communicates with the second cavity, and the second groove communicates with the first cavity through the second cavity. Finally, the metal pipes in two adjacent metal layers are communicated to form 3D metal pipes, thereby increasing the total length of the pipes and realizing more functions.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a 3D pipeline. Background technique [0002] In the semiconductor manufacturing industry, the next step of the integrated circuit process flow is to arrange metal connection lines between transistors and other titanium silicide contactless. Generally, the method of local interconnection is used. The step of forming local interconnection is the same as the step of forming shallow trench isolation. The steps are as complicated. The process first requires the deposition of a layer of dielectric film, followed by chemical mechanical polishing, engraving, etching and metal deposition, and finally ends with metal layer polishing. The result of this step is finally to obtain a kind of Similar to the patterns of refined inlaid jewelry or artwork, these patterns are generally metal interconnection structures such as through holes; in general, depositing a me...
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IPC IPC(8): B81C1/00H01L21/768
CPCB81C1/00063B81C1/00095H01L21/76802H01L21/76843H01L21/76877
Inventor 黎坡
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP