Graphene chemical vapor reaction deposition device with high working efficiency

Abstract

The invention relates to a graphene chemical vapor reaction deposition device with high working efficiency, which comprises a base, a controller, a power mechanism, a furnace body, a gas outlet pipe and two gas conduction mechanisms. Each gas conduction mechanism comprises a gas storage tank, a gas conduit, a gas conduction chamber and a gas inlet pipe; a gas conduction assembly comprises a gas conduction shaft, a driving assembly, a first bevel gear, two fan blades and two lantern rings; and the driving assembly comprises a driving block, a rotary table, a transmission shaft, a second bevel gear, a regulation frame and a regulation unit. The graphene chemical vapor reaction deposition device with high working efficiency controls flow of reaction gas entering the furnace body by the gas conduction mechanisms, so that the reaction gas enters the furnace body in a proper proportion, and reaction efficiency is improved; and not only that, a signal processing circuit has a gain adjustableeffect, so that acquisition of different levels of input signals can be met, and reliability of the signal processing circuit is improved.

Description

technical field [0001] The invention relates to the field of new material production equipment, in particular to a graphene chemical vapor phase reaction deposition device with high working efficiency. Background technique [0002] Graphene is a honeycomb planar film formed by carbon atoms in a specific way. It is a quasi-two-dimensional material with only one atomic layer thickness, so it is also called monoatomic layer graphite. At present, the common powder production methods of graphene are mechanical glass method, redox method, silicon carbide epitaxial growth method, etc., and the film production method is chemical vapor deposition (CVD), among which CVD method can prepare high-quality large-area graphene , to meet the requirements of large-scale preparation of high-quality graphene. [0003] When the CVD method prepares graphene, copper is usually used as the substrate, and carbon-containing gas and hydrogen-containing gas are introduced into the reaction furnace to ...

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Problems solved by technology

[0003] When the CVD method prepares graphene, copper is usually used as the substrate, and carbon-containing gas and hydrogen-containing gas are introduced into the reaction furnace to cause the gas to deposit and react on the surface of the substrate to form graphene. During the process, it is difficult to accurately adjust and control the ratio of hydrogen-containing gas and carbon-containing gas, resulting in too much or too little gas passing through, reducing production efficiency. Not only that, as the reaction progresses, in addition to depositing graphene on the substrate, Various impurities, dust and other particles will also adhere to the inner wall of the outlet pipe, which will affect the exhaust. When the air circulation is not smooth, the pressure in the reaction furnace will be too high, and dangerous accidents such as explosions will easily occur, which will lead to the production and preparation of graphene. certain danger

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