Unlock instant, AI-driven research and patent intelligence for your innovation.

A read high voltage transmission circuit

A high-voltage transmission and transmission circuit technology, applied in the field of memory, can solve the problems of slow transmission speed, large parasitic resistance and capacitance RC, etc.

Active Publication Date: 2020-12-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the prior art, because two MOS transistors are connected in series, the parasitic resistance and capacitance RC is relatively large, resulting in slow transmission speed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A read high voltage transmission circuit
  • A read high voltage transmission circuit
  • A read high voltage transmission circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0025] figure 2 It is a structural schematic diagram of a read high-voltage transmission circuit of the present invention. Such as figure 2 As shown, the present invention reads a high-voltage transmission circuit, including: a logic circuit 10 , a control circuit 20 and a transmission circuit 30 .

[0026] Among them, the logic circuit 10 is composed of a NOR gate NOR1, a first level s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a circuit for reading high-voltage transmission, comprising: a logic circuit for converting an erase permission signal ERASE and a program permission signal PROG into a high-voltage permission signal EPEN and a read permission signal EN; a control circuit for converting the high-voltage permission signal EPEN and the read permission signal EN into a high-voltage transmission control signal Vgate; and a transmission circuit, which is used for transmitting the read high voltage VD25 to the high voltage ZVDDL node at the time of reading under the control of the high voltage transmission control signal Vgate and disconnecting the read high voltage VD25 from the output high voltage ZVDDL node during erasing and programming. Therefore, the voltage drop can be reduced, thetransmission speed of the high voltage can be accelerated, and the voltage setup speed of the word line can be finally accelerated.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a high-voltage reading transmission circuit. Background technique [0002] Generally speaking, for split-gate flash memory, 2.5V high voltage is applied to the word line during read operation; 1.5V voltage is applied to the word line during programming; 12V high voltage is applied to the word line during erasing and writing. Read speed, during the read operation, the word line voltage build-up speed will affect the final read speed. [0003] figure 1 It is a circuit structure diagram of a traditional reading high-voltage transmission circuit. Such as figure 1 As shown, the source and substrate of PMOS transistor P1 are connected to high voltage VD25, the drain of PMOS transistor P1 is connected to the source of PMOS transistor P2, the drain and substrate of PMOS transistor P2 are connected to high voltage ZVDDL, and the gate of PMOS transistor P1 Connected to the first permis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26
CPCG11C16/26
Inventor 徐依然朱文毅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP