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A kind of film-forming equipment and in-situ cleaning method thereof

An in-situ cleaning and film-forming equipment technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of wasting manpower, financial resources, time, and loss, so as to reduce work intensity and avoid particles problems, the effect of shortening the cleaning time

Active Publication Date: 2020-11-10
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A lot of manpower, financial resources and time were wasted in the maintenance process, resulting in losses

Method used

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  • A kind of film-forming equipment and in-situ cleaning method thereof
  • A kind of film-forming equipment and in-situ cleaning method thereof
  • A kind of film-forming equipment and in-situ cleaning method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] When the film-forming source is trimethylaluminum, it is used for Al 2 o 3 During film formation, and when cleaning gas is HCl, the cleaning process of a kind of film formation equipment is as follows:

[0056] S01: The cleaning control module opens the valve A (8), nitrogen enters the reaction chamber for purging for 5 minutes, and the flow rate is 2000 sccm.

[0057] S02: The cleaning control module closes valve A (8) and stops purging. The dry pump evacuates the reaction chamber (1) and the vacuum exhaust line (2) for one hour. Set the pressure in the reaction chamber (1) to 2mtorr-10000mtorr, preferably 1000mtorr, and set the cleaning temperature in the reaction chamber (1) to 50-180°C, preferably 130°C.

[0058] S03: The cleaning control module opens the valve B (9), nitrogen (10) containing water vapor enters the reaction chamber (1), the ventilation time is 0.1-50 sec, preferably 2 sec, and the flow rate is 100-2000 sccm, preferably 1000 sccm. The water vapor...

Embodiment 2

[0063] When the film-forming source is trimethylaluminum, it is used for Al 2 o 3 During film formation, and when cleaning gas is HBr, the cleaning process of a kind of film formation equipment is as follows:

[0064] S01: The cleaning control module opens valve A (8), and nitrogen gas (7) enters the reaction chamber for purging for 5 minutes with a flow rate of 2000 sccm.

[0065] S02: The cleaning control module closes valve A (8) and stops purging. The dry pump evacuates the reaction chamber (1) and the vacuum exhaust line (2) for one hour. Set the pressure of the reaction chamber (1) to 2mtorr-10000mtorr, preferably 1000mtorr, and set the cleaning temperature in the reaction chamber (1) to 265-350°C, preferably 280°C.

[0066] S03: The cleaning control module opens the valve B (9), and the nitrogen gas (10) containing water vapor enters the reaction chamber (1), the ventilation time is 0.1-50 sec, preferably 2 sec, and the flow rate is 100-2000 sccm, preferably 1000 scc...

Embodiment 3

[0071] When the film-forming source is trimethylaluminum, it is used for Al 2 o 3 When forming a film, and the cleaning gas is BCl 3 , an in-situ-cleaned Al 2 O The cleaning process of the film forming equipment is as follows:

[0072] S01: The cleaning control module opens valve A (8), and nitrogen gas (7) enters the reaction chamber for purging for 5 minutes with a flow rate of 2000 sccm.

[0073] S02: The cleaning control module closes valve A (8) and stops purging. Close all intake valves, and dry the pump to evacuate the reaction chamber (1) and the vacuum exhaust line (2) for one hour. Set the pressure of the reaction chamber (1) to 2mtorr-10000mtorr, preferably 1000mtorr, and set the cleaning temperature in the reaction chamber (1) to 265-350°C, preferably 280°C.

[0074] S03: The cleaning control module opens the valve B (9), and the nitrogen gas containing water vapor enters the reaction chamber (1), the ventilation time is 0.1-50 sec, preferably 2 sec, and the f...

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Abstract

The invention discloses film forming equipment. The film forming equipment comprises an exhaust module, a reaction cavity, a main air inlet unit, an auxiliary air inlet unit, a film forming control module and a washing control module. When the film forming equipment carries out in-situ washing, the reaction cavity is kept at a washing temperature. Nitrogen containing water vapor first enters the reaction cavity, and the water vapor is absorbed to to-be-washed particles. Then, the nitrogen containing washing gas enters the reaction cavity, and the washing gas is dissolved in the water vapor absorbed by the to-be-washed particles, producing corresponding acid. The produced acid reacts with the to-be-washed particles, producing a washing compound and water, and the washing compound is sublimated into gas at the washing temperature and is discharged through the exhaust module. The film forming equipment and the washing method thereof provided by the invention have the advantages that in-situ washing can be carried out on the film forming equipment at regular time, and the washing technology is simple and rapid.

Description

technical field [0001] The invention relates to the field of in-situ cleaning, in particular to a film forming device and a cleaning method thereof. Background technique [0002] In recent years, semiconductor equipment has developed rapidly, involving semiconductors, integrated circuits, solar panels, flat-panel displays, microelectronics, light-emitting diodes, etc., and these devices are mainly composed of several layers of thin films with different material thicknesses formed on the substrate. Al 2 o 3 Thin film materials are widely used in these fields due to their mature technology, low film forming temperature, good material insulation, high light transmittance, doped conductivity, excellent barrier performance and high temperature resistance. For example, in the field of transparent conductive oxide film (TCO) glass, adding Al to ZnO 2 o 3 It can greatly improve its conductivity and high temperature resistance. In the field of high-density capacitors, Al 2 o 3...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44
CPCC23C16/4407
Inventor 王勇飞兰云峰王洪彪
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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