A long wavelength InGaAs quantum dot structure and a preparation method thereof

Abstract

A long-wavelength InGaAs quantum dot structure and a preparation method thereof belong to that technical field of semiconductor material manufacture, which is an InGaAs quantum dot structure with a luminescence wavelength of 1.3 micron wave band and a preparation method thereof. The epitaxial layers were grown by epitaxial technique. A GaAs transition lay is sequentially grown on a GaAs substrate,and InxGa1-XAs transition layer, InAs quantum dot layer, InxGa1-XAs strained layer, GaAs barrier layer, GaAs cladding layer; InAs quantum dots are grown in two steps, first, the growth temperature isin the range of 470-490 DEG C, 2.0 to 3.0 ml of growth thickness, 20 to 60 s interval between that second step and the first step in time, wherein the growth temperature is raised to 490 to 510 DEG Cin the time interval, and then the growth is continue at a temperature in the temperature range, and the growth thickness is 0.5 to 1.5 ml. InGaAs quantum dot material with 1.3 [mu] m wavelength bandwas fabricated by this method, which has good uniformity of quantum dot size, easy control and stable process.

Description

technical field [0001] The invention relates to an InGaAs quantum dot structure with a luminous wavelength of 1.3 microns and a preparation method thereof, belonging to the technical field of semiconductor material manufacturing. Background technique [0002] The quantum dot material with the quantum dot structure as the active region has the advantages of lower threshold current density, higher optical gain, higher characteristic temperature and wider modulation bandwidth in theory, and has the advantages of manufacturing semiconductor lasers in Therefore, the field of quantum dot materials is an active field of invention. [0003] Due to its unique and excellent photoelectric properties, the GaAs-based InGaAs quantum dot system has become a substitute for InP-based materials and can be used to prepare materials for 1.3-micron-band long-wavelength lasers for optical communications. Since the GaAs substrate is cheaper than the InP substrate, AlGaAs can also be used as the c...

AI Technical Summary

Problems solved by technology

On the premise of obtaining long-wavelength luminescence in the 1.3 micron band, improving size uniformity and surface density is technically difficult from the perspective of preparation methods

That is to say, during the epitaxy process of the quantum dot layer, the quantum dots are aggregated and combined, the size of the quantum dots increases, and the emission wavelength moves to the long-wavelength direction until the long-wavelength light in the 1.3 micron band can be emitted. However, due to the aggregation and combination of quantum dots It will inevitably lead to a decrease in the density of quantum dots; in addition, the aggregation and combination are not as uniform as desired, resulting in a decrease in the uniformity of quantum dot size

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