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Preparation of 1.3 micron waveband InAs quantum dot material

A technology of quantum dot material and quantum dot layer, which is applied in the field of semiconductor material manufacturing, can solve the problems of quantum dot density decrease and quantum dot size uniformity decrease, and achieve the effects of easy control, good quantum dot size uniformity and process stability

Inactive Publication Date: 2009-04-22
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the premise of obtaining long-wavelength luminescence in the 1.3 μm band, it is technically difficult to improve the size uniformity and surface density from the perspective of preparation methods.
That is to say, during the epitaxy process of the quantum dot layer, the quantum dots are aggregated and combined, the size of the quantum dots increases, and the emission wavelength moves to the long-wavelength direction until the long-wavelength light in the 1.3 μm band can be emitted. However, due to the aggregation and combination of quantum dots It will inevitably lead to a decrease in the density of quantum dots; in addition, the aggregation and combination are not as uniform as desired, resulting in a decrease in the uniformity of quantum dot size

Method used

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  • Preparation of 1.3 micron waveband InAs quantum dot material
  • Preparation of 1.3 micron waveband InAs quantum dot material
  • Preparation of 1.3 micron waveband InAs quantum dot material

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Experimental program
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Effect test

Embodiment 1

[0019] Embodiment 1: Each epitaxial layer is grown by MOCVD epitaxial technology, and a low-toxic Group V organic source-tert-butylarsenic (TBA) is used as the arsenic source. The preparation steps include:

[0020] Step 1: growing a GaAs transition layer on a GaAs substrate, the growth temperature is 700°C, and the growth thickness is 200nm;

[0021] Step 2: grow the InAs quantum dot layer on the GaAs transition layer in two steps. In the first step, the growth temperature is 480°C and the growth thickness is 2.4ML. The time interval between the second step and the first step is 30s. Increase the growth temperature to 500°C within a time interval, and then continue to grow at this temperature, with a growth thickness of 0.6ML;

[0022] Step 3: Growing In on the InAs quantum dot layer x Ga 1-x As strained layer, x=0.05, growth temperature is 500°C, growth thickness is 8nm;

[0023] Step 4: In the In 0.05 Ga 0.95 As strained layer grows GaAs barrier layer, the growth tempe...

Embodiment 2

[0027] Embodiment 2: Each epitaxial layer is grown by MOCVD epitaxial technology, and low-toxicity Group V organic source-tert-butylarsenic (TBA) is used as the arsenic source. The preparation steps include:

[0028] Step 1: growing a GaAs transition layer on a GaAs substrate, the growth temperature is 700°C, and the growth thickness is 200nm;

[0029] Step 2: grow the InAs quantum dot layer on the GaAs transition layer in two steps. In the first step, the growth temperature is 480°C and the growth thickness is 2.4ML. The time interval between the second step and the first step is 30s. Increase the growth temperature to 500°C within a time interval, and then continue to grow at this temperature, with a growth thickness of 0.7ML;

[0030] Step 3: Growing In on the InAs quantum dot layer x Ga 1-x As strained layer, x=0.09, growth temperature is 500°C, growth thickness is 8nm;

[0031] Step 4: In the In 0.09 Ga 0.91 As strained layer grows GaAs barrier layer, the growth temp...

Embodiment 3

[0035]Embodiment three: each epitaxial layer is grown by MOCVD epitaxial technology, and low-toxicity Group V organic source-tert-butylarsenic (TBA) is used as the arsenic source, and the preparation steps include:

[0036] Step 1: growing a GaAs transition layer on a GaAs substrate, the growth temperature is 700°C, and the growth thickness is 200nm;

[0037] Step 2: grow the InAs quantum dot layer on the GaAs transition layer in two steps. In the first step, the growth temperature is 490°C and the growth thickness is 2.2ML. The time interval between the second step and the first step is 20s. Increase the growth temperature to 500°C within a time interval, and then continue to grow at this temperature, with a growth thickness of 1.0ML;

[0038] Step 3: Growing In on the InAs quantum dot layer x Ga 1-x As strained layer, x=0.12, growth temperature is 500°C, growth thickness is 8nm;

[0039] Step 4: In the In 0.12 Ga 0.88 As strained layer grows GaAs barrier layer, the grow...

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Abstract

The invention relates to a method for preparing an InAs quantum dot material with wavelength of 1.3 micron, in particular to a method for preparing the InAs / GaA quantum dot material with illuminant wavelength of 1.3 micron by adopting an MOCVD technology, and belongs to the technical field of semiconductor material manufacture. The prior art adopts an MBE epitaxial technology and has a gap from pragmatization and commercialization. The method adopts the MOCVD epitaxial technology to grow each epitaxial layer; an InAs quantum dot layer grows in two steps: step one, the temperature for growth is certain temperature between 470 and 490 DEG C; the growth thickness is between 2.0 and 3.0 ML; the time interval between step two and the step one is between 20 and 60 seconds; and in the time interval, the growth temperature is promoted to a temperature of between 490 and 510 DEG C; and step two, the epitaxial layer continuously grows at certain temperature within the temperature range; and the growth thickness is between 0.5 and 1.5 ML. The InAs quantum dot material is prepared which has illuminant wavelength of 1.3 micron and is provided with a room-temperature continuous working mode device; and the method is easy to control and has a stable process.

Description

technical field [0001] The invention relates to a method for preparing an InAs / GaAs quantum dot material with a light emission wavelength of 1.3 microns by using MOCVD (metal organic chemical vapor deposition) technology, and belongs to the technical field of semiconductor material manufacturing. Background technique [0002] The quantum dot material with the quantum dot structure as the active region has the advantages of lower threshold current density, higher optical gain, higher characteristic temperature and wider modulation bandwidth in theory, and has the advantages of manufacturing semiconductor lasers in Therefore, the field of quantum dot materials is an active field of invention. [0003] In(Ga)As / GaAs quantum dot system has become a substitute for InP-based materials due to its unique and excellent photoelectric properties, and can be used to prepare 1.3μm band long-wavelength laser materials for optical communications. Since the GaAs substrate is cheaper than t...

Claims

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Application Information

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IPC IPC(8): C23C16/18C23C16/52
Inventor 李林刘国军李占国李梅
Owner CHANGCHUN UNIV OF SCI & TECH