Thick-film hybrid integrated heating device and preparation method for micro-atomic gas chamber

Abstract

The invention provides a thick-film hybrid integrated heating device and a preparation method for a micro-atomic gas chamber. The thick-film technology is used to brush the heating resistors on the substrate layer by layer, and perform insulation and isolation to form a multi-layer heating structure. Transistors, thermistors and single-chip microcomputers and other components are integrated on the substrate. Each heating resistor is connected to a triode and controlled by the DAC output port of the single-chip microcomputer. The single-chip microcomputer collects the voltage of the thermistor through its ADC module to collect temperature signals. After the PID algorithm, the heating power of each layer of heating resistors is controlled by DAC to realize a highly integrated heating device with multi-level continuous control. The invention has the advantages of simple circuit structure, high integration, integrated control and heating, can improve many problems of current micro-atom gas chamber heating devices, can be extended and applied to more devices that need to be heated, and has simple process and is easy to prepare.

Description

technical field [0001] The invention relates to a thick-film hybrid integrated heating device oriented to a micro-atomic gas chamber and a preparation method, which are suitable for high-integration and high-performance chip-level atomic clocks, micro-miniature atomic spin gyroscopes, SERF (spin-exchange relaxation-free, Non-spin exchange relaxation) atomic magnetometers and the like belong to the field of micro-electromechanical systems. Background technique [0002] Many physical researches and precise measurements are based on the quantum process of the interaction between light and atoms. It is necessary to prepare long-lived atomic polarization states in atomic vapor. Usually, people store atoms in a closed glass container. This container is atomic gas. room. During the experiment, it is necessary to heat up the atomic gas chamber and stabilize it at a certain temperature value to obtain a higher atomic number density, and use gaseous atoms for precise measurement. As...

AI Technical Summary

Problems solved by technology

[0008] In order to solve the deficiencies of the prior art, the present invention provides a thick-film hybrid integrated heating device and a preparation method for micro-atomic gas chambers. The temperature distribution gradient of the chamber heating device is large, the power adjustment range is small, the volume is large, the heating efficiency is low, the noise is large, the connection is messy, and the control accuracy is poor. It can be extended and applied to more devices that need to be heated, and the preparation method is simple. , using thick film technology to mix and integrate amplifying transistors, single-chip microcomputers, thermistors and multiple heating resistors with different resistances into the substrate to make heating devices, which is easy to control production

Images