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Method for producing sic substrate provided with graphene precursor and method for surface treating sic substrate

一种表面处理、石墨烯的技术，应用在石墨烯、单层石墨烯、处理后等方向，能够解决未描述SiC基板与石墨烯片结构等问题

Active Publication Date: 2018-12-21
KWANSEI GAKUIN EDUCTIONAL FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, in Patent Document 1, the structure between the SiC substrate and the graphene sheet is not described

Method used

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  • Method for producing sic substrate provided with graphene precursor and method for surface treating sic substrate
  • Method for producing sic substrate provided with graphene precursor and method for surface treating sic substrate
  • Method for producing sic substrate provided with graphene precursor and method for surface treating sic substrate

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Embodiment Construction

[0062] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, refer to figure 1 , the high-temperature vacuum furnace 20 used for the heat treatment of this embodiment will be described.

[0063] like figure 1 As shown, a high-temperature vacuum furnace (heating device) 20 includes a main heating chamber 21 and a preheating chamber 22 . The main heating chamber 21 is capable of heating a SiC substrate 41 (single crystal SiC substrate) having at least a surface made of single crystal SiC to a temperature of 1000° C. or higher and 2300° C. or lower. The preheating chamber 22 is a space for preheating before heating the SiC substrate 41 in the main heating chamber 21 .

[0064] A vacuum forming valve 23 , an inert gas injection valve 24 and a vacuum gauge 25 are connected to the main heating chamber 21 . The vacuum forming valve 23 can adjust the degree of vacuum of the main heating chamber 21 . The inert gas injection valv...

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Abstract

The present invention comprises a graphene precursor formation process for forming a graphene precursor by heating an SiC substrate so as to sublime Si atoms in an SiC plane of the surface of said SiCsubstrate, and stopping the heating before the graphene precursor becomes fully covered with graphene. The SiC substrate treated in this graphene precursor formation process has formed therein stepsmade up of multiple tiers of molecular layers. These steps have formed therein a step structure in which a molecular layer having two dangling bonds of a C atom is disposed closer to the surface sideas compared with a molecular layer having one dangling bond of a C atom.

Description

technical field [0001] The invention mainly relates to a method for forming a graphene precursor on a SiC substrate. Background technique [0002] In recent years, graphene has attracted much attention as a material with high electron mobility. Graphene is a crystal of C atoms having a six-membered ring and one atom thick. Since graphene is one atom thick, it is difficult to manufacture, and various preparation methods have been proposed so far. Patent Documents 1 and 2 disclose a method of forming graphene on a SiC substrate. [0003] Patent Document 1 describes a process in which Si atoms in the SiC substrate are sublimated by heating the SiC substrate in a vacuum, and then the remaining C atoms are grapheneized. Formation of one or more graphene sheets is also described in Patent Document 1. Also, in Patent Document 1, the structure between the SiC substrate and the graphene sheet is not described. [0004] Patent Document 2 relates to a structure in which a SiC subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/188C30B29/36C30B33/02H01L21/3065
CPCC30B33/02H01L21/3065C01B32/188C30B29/36C01B32/184C01B2204/02H01L21/02527H01L21/02378H01L21/02019H01L21/02433H01L21/02658H01L21/02612H01L21/02436C30B23/063
Inventor 金子忠昭久津间保德堂岛大地
Owner KWANSEI GAKUIN EDUCTIONAL FOUND
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