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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as splicing precision circuit disconnection, and achieve the effect of miniaturization, time and labor

Inactive Publication Date: 2021-03-23
高塔伙伴半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Insufficient splicing accuracy will lead to bad phenomena such as circuit breakage at the splicing part 15

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0050] image 3 It is a schematic top view of the semiconductor device 101 exemplified in the present disclosure. The semiconductor device 101 is a solid-state imaging device, and has an imaging unit 102 located at a central position, and an imaging unit 103 including the imaging unit 102 therein. A peripheral circuit 104 is provided around the semiconductor device 101 , and a scribe region 105 is further located around the peripheral circuit 104 . Here, elements in the imaging unit 102 on the inner side are used when capturing moving images, and elements in the imaging unit 103 (both elements in the imaging unit 102 on the inner side and elements on the outside thereof) are used when capturing still images.

[0051] The pattern of the semiconductor device 101 is divided into a plurality of (here, three) patterns 107a, 107b, and 107c by the bonding parts 106a and 106b. These patterns are spliced ​​by splicing exposure to manufacture the semiconductor device 101 .

[0052] I...

no. 2 approach

[0084] A second embodiment will be described. This embodiment also takes image 3 The illustrated semiconductor device 101 is described as an example.

[0085] exist Figure 10 In the figure, the first mask 201 for element formation and the mask 202 for second element formation used for splicing exposure for forming the element isolation layer of the semiconductor device 101 in this embodiment are shown.

[0086] Such as Figure 10 As shown, the first element forming mask 201 is a rectangle whose exposure region 203 has a height h and a width a, and has overlapping inspection marks 205a to 205h. In addition, the second element forming mask 202 is a rectangle whose exposure region 204 has a height h and a width b, and has overlapping inspection marks 206a to 206h.

[0087]These first and second element forming masks 201 and 202 have substantially the same structure as the first and second element forming masks 108 and 109 in the first embodiment, and include image 3 The p...

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Abstract

The semiconductor device includes: first and second inspection mark regions (51a, 51b) of the same pattern including a plurality of overlapping inspection marks (61a, 61b); A first element region (52); and a second element region (53) having a portion overlapping with the second inspection mark region (51b). The first and second element regions (52, 53) are adjacent and have different areas. The first element region (52) has a first pattern aligned with a plurality of first overlapping inspection marks (61a). The second element region (53) has a second pattern aligned with a plurality of second overlapping inspection marks (61b).

Description

technical field [0001] The present disclosure relates to a semiconductor device and a manufacturing method thereof, in particular to a large-area semiconductor device requiring divisional exposure and a manufacturing method thereof. Background technique [0002] In recent years, as the functions and performance of semiconductor devices have improved, pattern miniaturization has been progressing in order to integrate more semiconductor elements. However, the number of semiconductor elements to be mounted has significantly increased, far exceeding the development of pattern miniaturization, so the area of ​​the semiconductor substrate needs to be increased. For example, as the performance of imaging devices increases, the size of imaging elements increases, and a large-sized semiconductor device called a 35mm full-frame is required. [0003] Generally, photolithography is used to fabricate semiconductor devices. This is a technique that applies a resist on a semiconductor su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F9/00G01B11/00G03F1/42G03F7/20
CPCG03F1/42G03F9/7084G03F7/70475G03F7/70633G03F9/7076G03F9/7046G03F7/70466H01L21/0337H01L23/544H01L2223/54426
Inventor 小川贵久福罗满德高桥信义
Owner 高塔伙伴半导体有限公司
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