Preparation method of nanometer channel

Abstract

The invention relates to a preparation method of a nanometer channel, the method comprising the following steps: providing a substrate, and arranging a photoresist mask layer on the surface of the substrate, wherein the thickness of the photoresist mask layer is H; exposing and developing the photoresist mask layer to obtain a patterned mask layer comprising a plurality of strip mask modules, wherein the interval distance between adjacent strip mask modules is L, the side surface of the patterned mask layer is set as a second region, and the surface of the substrate is a third region; depositing a first thin film layer, wherein the thickness of the first thin film layer is D, so that the angle between the deposition direction and the thickness direction of the strip mask is theta.1, and theta.1 (tan-1 (L / H); depositing a second thin film layer by changing the deposition direction so that the angles between the deposition direction and the thickness direction of the strip mask are theta2, theta2 (tan-1 [L / (H + D)], wherein, with 0 (Htan theta 1 + (H + D) tan theta 2-L<10 nm, the spacing region between the first thin film layer and the second thin film layer is a nanometer-scale channel.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a preparation method of a nano-scale channel. Background technique [0002] When preparing small-sized structures in the prior art, if a direct processing method is used, the processing size is mostly determined by the performance of the processing equipment. The direct processing of structures with fine grooves smaller than 10 nm has exceeded the limit of most equipment. Even if it can be processed, the cost and yield are not easy to control. [0003] In order to obtain a small microstructure, conventional methods such as evaporation stripping or etching methods must first obtain a small-sized structure from a photoresist, and then perform subsequent processing based on this structure. However, the problems of these methods are: first, it is difficult to achieve small size photoresist, too thick glue itself is difficult to stand, easy to collapse, and too thin gl...

AI Technical Summary

Problems solved by technology

However, the problems of these methods are: firstly, small-sized photoresist is difficult to realize, too thick resist itself is difficult to stand upright, and it is easy to collapse, and too thin resist is difficult to achieve pattern transfer; secondly, the stripping or etching process It will affect the photoresist, resulting in the residue of photoresist and affecting the subsequent structure

At the same time, the products prepared using the above-mentioned small-scale structures will be correspondingly limited, such as thin film transistors, etc.

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