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Polycrystalline silicon ingot furnace for reducing usage amount of high purity argon

A technique for polysilicon ingot casting furnace and usage, which is applied in the direction of polycrystalline material growth, crystal growth, chemical instruments and methods, etc., can solve the problems of increasing ingot cost, excessive argon gas, poor ingot quality, etc. Quantity, low ingot cost, good quality effect

Pending Publication Date: 2019-01-04
ZHEJIANG YIYANG SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The above-mentioned scheme solves the problem of relatively poor ingot quality in the existing polysilicon ingot casting furnace to a certain extent, but there are still many deficiencies in this scheme, for example, the argon gas fed into it does not have a better processing mechanism, and the argon gas fed into it does not have a good processing mechanism. More gas, increasing the cost of casting ingots

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  • Polycrystalline silicon ingot furnace for reducing usage amount of high purity argon

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0020] Such as figure 1 As shown, the polysilicon ingot furnace for reducing the consumption of high-purity argon gas comprises a furnace body 1, and a heat insulating support plate 3 arranged horizontally through a plurality of support columns 2 in the furnace body 1, and a heat insulating support plate 3 is provided on the heat insulating support plate 3 A ring-shaped heat preservation cover 4 is arranged in a ring shape, and a crucible 5 arranged on the heat insulating support plate 3 is arranged on the inner side of the ring heat preservation cover 4, and a heater 6 corresponding to the crucible 5 is provided on the outer side of the ring heat preservation cover 4, The upper end of the furnace body 1 is provided with an argon gas inlet 11, the lower end is provided with a number of argon gas outlets 12, the upper end of the annula...

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Abstract

The invention relates to a polycrystalline silicon ingot furnace for reducing usage amount of high purity argon and solves the problem that the conventional polycrystalline silicon ingot furnace is high in argon introducing amount, low in utilization ratio, high in cost and poor in ingot quality. The polycrystalline silicon ingot furnace comprises a furnace body. A heat-isolating supporting plateis arranged in the furnace body, a circular insulating hood is arranged on the heat-isolating supporting plate, a crucible is arranged on the peripheral inner side of the annular insulating hood, a heater is arranged on the peripheral outer side of the insulating hood, an argon inlet is formed in the upper end of the furnace body, a plurality of argon outlets are formed in the lower end of the furnace body, the upper end of the annular insulating hood is closed, the diameter of the furnace body is decreased gradually from the end close to the argon inlet to the other end, a cone-shaped blowingchannel is formed between the peripheral inner side of the furnace body and the peripheral outer side of the annular insulating hood, a cone-shaped gas distributing channel is arranged between the peripheral inner side of the annular insulating hood and the peripheral outer side of the crucible, and a communicating structure is arranged on the annular insulating hood. The polycrystalline siliconingot furnace has the advantages of being low in argon introducing amount, low in cost, good in ingot quality and the like.

Description

technical field [0001] The invention relates to the technical field of polysilicon ingot casting, in particular to a polysilicon ingot furnace for reducing the consumption of high-purity argon. Background technique [0002] Polycrystalline silicon is a form of elemental silicon. When molten elemental silicon solidifies under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei, and these nuclei grow into crystal grains with different crystal plane orientations. These crystal grains Joined together to form polysilicon. The process of producing solar photovoltaic products in the solar photovoltaic industry includes polycrystalline silicon ingot casting, cutting into pieces, making cells and packaging them into solar modules. It can be seen that polycrystalline silicon ingot casting is an important part of the solar photovoltaic industry. In the process of polycrystalline silicon ingot casting, High-purity argon can pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 汪伟华
Owner ZHEJIANG YIYANG SOLAR TECH CO LTD