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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve the problem of poor uniformity of SRAM's maintenance current

Active Publication Date: 2019-01-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen from the curve (1) that the uniformity of the sustaining current of the existing SRAM is relatively poor

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0041] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0042] At the same time, it should be understood that, for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship.

[0043] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as any limitation of the invention, its application or uses.

[0044] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the A...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof, which relate to the technical field of semiconductors. The manufacturing method includes providing a semiconductor structure including a semiconductor substrate and a gate structure on the semiconductor substrate; Forming a polycrystalline material layer on the semiconductor substrate and on at least one side of thegate structure; Performing an amorphization process on the polycrystalline material layer so that the polycrystalline material layer becomes an amorphous material layer; Performing doping on the amorphous material layer to incorporate dopants in the amorphous material layer; And performing an annealing process such that the dopant enters the semiconductor substrate to form a source and / or a drainunder the amorphous material layer. The invention can make the dopant more uniform in the diffusion process, so the uniformity of the holding current of the SRAM device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In SRAM design, the standby current is a very important factor, which is equivalent to the leakage current of the device when it is not working. The smaller the current value of the holding current, the better. In addition to the current value, the more uniform the distribution of the SRAM's sustaining current, the better. [0003] At present, SRAM generally uses NMOS (N-channel Metal Oxide Semiconductor, N-channel Metal Oxide Semiconductor) devices as PD (Pull Down, pull-down) transistors and PG (Pass Gate, pass gate) transistors. In the prior art, during the manufacture of NMOS devices, a thin polysilicon layer may be formed over the source and drain regions, and then phosphorus is diffused from the polysilicon layer into the silicon to form the source and drain. However, such a m...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66568H01L29/78
Inventor 魏琰宋化龙
Owner SEMICON MFG INT (SHANGHAI) CORP