MOS transistor driver circuit

Abstract

A MOS transistor drive circuit is disclosed, and is used for driving a target NMOS transistor. A circuit comprises a photoelectric coupler, a level driver, an NMOS transistor, a PMOS transistor, and first resistor, the anode of the photoelectric coupler is connected with a control signal input terminal, the cathode is connected to the ground, the collector of the photoelectric coupler is respectively connected with an input terminal of the level driver and a first power supply, the emitter of the photoelectric coupler is connected to the ground, the output terminal of the level driver is connected with the grid of the NMOS transistor and the grid of the PMOS transistor separately, the drain of the NMOS transistor is connected to a second power supply, the drain of the PMOS transistor is grounded, the source of the NMOS transistor, the source of the PMOS transistor and one end of the first resistor are connected to the grid of the target NMOS transistor, and the other end of the first resistor and the source of the target NMOS transistor are connected to the first power supply. The invention has the advantages of high switching speed, the duty cycle can reach 100%, a negative voltage shutdown function is achieved, electrical isolation is good and the circuit is not liable to be interfered.

Description

technical field [0001] The invention belongs to the field of motor drive, in particular to a MOS tube drive circuit. Background technique [0002] With the rapid development of power electronic devices, the power drive technology has risen rapidly. As one of the main components of the servo drive device, the performance of the motor driver directly affects the performance of the CNC machine tool. The power drive circuit is the most important power conversion link in the motor driver, which plays an absolute role in the performance of the motor driver. [0003] Traditional power driving circuits are mostly based on IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) driving circuits. However, due to its own structural problems, the switching speed of IGBT is slow, generally only 10kHz ~ 20kHz, it is difficult to meet some power device driving occasions with specific switching speed requirements, and the driving circuit based on MOSFET (Metal-Oxide Se...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the slow switching speed of the IGBT drive circuit in the prior art, the driving duty cycle of the MOSFET bootstrap circuit cannot reach 100%, and the complementary output circuit composed of triodes cannot provide negative voltage shutdown to ensure that the MOS tube With the defects of rapid shutdown, poor electrical isolation performance, and prone to false triggering, a MOS tube drive circuit is provided

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