Bonding-based thin film bulk acoustic wave resonator based and processing method thereof

A thin-film bulk acoustic wave and processing method technology, which is applied in the field of piezoelectric devices, can solve the problems affecting the performance of thin-film bulk acoustic wave resonators and difficult removal of sacrificial layer materials, so as to avoid incomplete release and improve the Q value

Pending Publication Date: 2019-01-04
HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above process, the material of the sacrificial layer in the surface cavity is difficult to be completely removed, and the adhesion of the residue of the sacrificial layer will eventually affect the performance of the film bulk acoustic resonator

Method used

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  • Bonding-based thin film bulk acoustic wave resonator based and processing method thereof
  • Bonding-based thin film bulk acoustic wave resonator based and processing method thereof
  • Bonding-based thin film bulk acoustic wave resonator based and processing method thereof

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Embodiment 1

[0043] The present invention proposes a novel bonding-based film bulk acoustic resonator, the specific structure of which can be found in figure 1 shown. It includes: a substrate 100 , a first metal pillar 710 and a second metal pillar 720 arranged on the substrate 100 , and a pressure rod arranged between the first metal pillar 710 and the second metal pillar 720 An electrical film stack structure, wherein the piezoelectric film stack structure includes a first electrode 300, a piezoelectric layer 400, and a second electrode 500, and the piezoelectric layer 400 is located at the first electrode 300 and the second electrode 500 Between, and the first electrode 300 and the second electrode 500 are arranged opposite, the first electrode 300 is also electrically connected to the first metal post 710, and the second electrode 500 is also connected to the second The metal posts 720 are electrically connected.

[0044] The bonding-based thin-film bulk acoustic resonator of the emb...

Embodiment 2

[0050] Referring to FIG. 2, the bonding-based thin-film bulk acoustic resonator according to Embodiment 1 of the present invention can be manufactured through the following process steps:

[0051] A silicon wafer polished on one side or both sides is prepared as the substrate 100 with the polished side facing up, and standard cleaning is performed, as shown in FIG. 2( a ).

[0052] Electrode materials and piezoelectric materials are deposited on the substrate 100 to construct a piezoelectric film stack structure, wherein the piezoelectric film stack structure includes a first electrode 300, a piezoelectric layer 400 and a second electrode 500, and the piezoelectric layer 400 is located between the first electrode 300 and the second electrode 500, and the first electrode 300 and the second electrode 500 are oppositely arranged.

[0053] Preferably, in order to facilitate the peeling of the substrate 100 after eutectic bonding, in the manufacturing process of the bonded thin-film ...

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Abstract

The invention provides a bonding-based thin film bulk acoustic wave resonator and a processing method thereof, wherein, the bonding-based thin film bulk acoustic wave resonator comprises a substrate,a first metal column and a second metal column arranged on the substrate; and a piezoelectric film stacking structure disposed between the first metal column and the second metal column, wherein the piezoelectric thin film stack structure includes a first electrode, a piezoelectric layer and a second electrode disposed between the first electrode and the second electrode and disposed opposite to each other, the first electrode is further electrically connected to the first metal pillar and the second electrode is electrically connected to the second metal pillar. The thin film bulk acoustic wave resonator based on bonding can ensure the cleanness of the sacrificial layer material in the cavity and improve the performance of the thin film bulk acoustic wave resonator based on bonding.

Description

technical field [0001] The invention relates to a piezoelectric device, in particular to a bonding-based film bulk acoustic wave resonator and a processing method thereof. Background technique [0002] With the development of wireless communication applications, people have higher and higher requirements for data transmission speed. In the field of mobile communication, the first generation of communication technology is analog technology, the second generation of communication technology realizes digital voice communication, the third generation of communication technology is characterized by multimedia communication, and the fourth generation of communication technology increases the communication rate to 1Gbps, delay Reduced to 10ms, the fifth-generation communication technology is a new generation of mobile communication technology after the fourth-generation communication technology. Although the technical specifications and standards of the fifth-generation Compared w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H9/02
CPCH03H9/02094H03H9/171
Inventor 不公告发明人
Owner HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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