An epitaxial wafer for a diode

Abstract

The invention discloses an epitaxial wafer for a diode, comprising an upper shell and a lower shell, wherein the upper shell is arranged on the top of the lower shell; The sapphire, the undoped gallium nitride and the n-type heavily doped gallium nitride are sequentially closely bonded from bottom to top, and are fixedly connected with the lower shell; The inner part of the upper shell is providedwith a multi-quantum hydrazine, p-type aluminum gallium nitrogen, p-type gallium nitride and n-type aluminum gallium nitrogen, According to the invention, An anti-reverse connection diode is mountedon top of the gallium-doped zinc oxide, The epitaxial wafer can effectively avoid the problem that the epitaxial wafer releases static electricity and conducts into the diode, at the same time, the static electricity is led into the earth by the electrostatic wire, static electricity can be well eliminated, and the diode is protected. As a groove is arranged on the surface of the titanium-aluminumconnection block, the epitaxial wafer can be effectively stuck with the diode connection pillar, and the epitaxial wafer is well fixed in the diode.

Description

technical field [0001] The invention relates to the technical field of epitaxial wafers, in particular to an epitaxial wafer for diodes. Background technique [0002] Epitaxy is one of the semiconductor processes. In the bipolar process, the bottom layer of the silicon wafer is P-type substrate silicon (some add a buried layer); then a layer of single crystal silicon is grown on the substrate. This layer of single crystal silicon is called For the epitaxial layer; and then implant the base region, emitter region, etc. on the epitaxial layer. Finally, the vertical NPN tube structure is basically formed: the epitaxial layer is the collector area, and the epitaxial layer has a base area and an emission area. The epitaxial wafer is a silicon wafer with an epitaxial layer on the substrate, because some factories only do the process after epitaxy Production, so they buy epitaxial wafers made by others to do the follow-up process. From this, we know that epitaxial wafers for diode...

AI Technical Summary

Problems solved by technology

[0003] The existing epitaxial wafers for diodes are easy to discharge static electricity and cause damage to the dimethyl tube. When installing the epitaxial wafers, they are easy to loose and are not easy to fix.

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