Epitaxial wafer for a diode
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 安徽星宇生产力促进中心有限公司
- Publication Date
- 2020-04-17
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Abstract
Description
technical field
[0001] The invention relates to the technical field of epitaxial wafers, in particular to an epitaxial wafer for diodes. Background technique
[0002] Epitaxy is one of the semiconductor processes. In the bipolar process, the bottom layer of the silicon wafer is P-type substrate silicon (some add a buried layer); then a layer of single crystal silicon is grown on the substrate. This layer of single crystal silicon is called For the epitaxial layer; and then implant the base region, emitter region, etc. on the epitaxial layer. Finally, the vertical NPN tube structure is basically formed: the epitaxial layer is the collector area, and the epitaxial layer has a base area and an emission area. The epitaxial wafer is a silicon wafer with an epitaxial layer on the substrate, because some factories only do the process after epitaxy Production, so they buy epitaxial wafers made by others to do the follow-up process. From this, we know that epitaxial wafers for diode...