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a b 4 Preparation method of c nanoribbon

A nanobelt and polycarbosilane technology, applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, can solve the problems of lack of effective methods for manufacturing boron carbide nanobelts, and achieve shortened preparation time, simplified process flow, and high purity and conversion effects

Active Publication Date: 2021-09-28
HARBIN INST OF TECH AT WEIHAI +1
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

But there is still a lack of effective methods for making boron carbide nanoribbons

Method used

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  • a b  <sub>4</sub> Preparation method of c nanoribbon
  • a b  <sub>4</sub> Preparation method of c nanoribbon
  • a b  <sub>4</sub> Preparation method of c nanoribbon

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with specific examples.

[0020] B involved in the present invention 4 The preparation method of C nanobelt comprises the following steps:

[0021] Step 1, mixing materials: uniformly disperse polyaminoborane and polycarbosilane in tetrahydrofuran to obtain a mixture, wherein the mole percentage of polyaminoborane is 30% to 40%, and the molar content of polycarbosilane The percentage content is 60%~70%. Specifically, polyaminoborane and polycarbosilane can be uniformly dispersed in tetrahydrofuran under the joint action of ultrasonic vibration and mechanical stirring. The polyaminoborane can be obtained by heating the commercially available or self-prepared ammoniaborane; the polycarbosilane and tetrahydrofuran are commercially available analytically pure grades.

[0022] Step 2, drying: drying the mixture obtained in step 1 at a drying temperature of 50°C to 60°C.

[0023] Step 3. Grinding: Grindi...

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Abstract

The present invention proposes a B 4 The preparation method of C nanoribbon comprises step 1, mixing materials: polyaminoborane and polycarbosilane are uniformly dispersed in tetrahydrofuran to obtain a mixture; step 2, drying: the mixture obtained in step 1 is dried, and the drying temperature is 50°C~60°C; step 3, grinding: grind the dried mixture into precursor powder; step 4, sintering and retrieving: sintering the precursor powder in a protective gas environment, when the sintering temperature reaches 1400°C, Keep the temperature for 0.5h~1.5h under the protective gas environment, and prepare B by vapor deposition method. 4 C nanoribbons, and then when the temperature drops, the B 4 C nanoribbons. The nanoribbons prepared by the above preparation method are single crystal B with uniform width and thickness 4 C nanobelt, the above preparation method can make B under the premise of simplifying the process flow and shortening the preparation time 4 The C nanobelt still maintains high purity and conversion rate, which significantly reduces the production cost and has a broad application prospect.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a B 4 C nanoribbon preparation method. Background technique [0002] Boron carbide is one of the most attractive non-oxide materials, and has been used in high-tech fields such as civil, aviation, military and nuclear industries. It is a rhombohedral structure, and its structure can be described as a cubic lattice extending diagonally in space, forming fairly regular icosahedrons at each corner. Boron carbide has many excellent physical and chemical properties due to its special crystal structure. Its main properties include low density, high hardness (second only to diamond and cubic boron nitride), high melting point and high temperature wear resistance, and low thermal expansion coefficient. , excellent thermoelectric properties, strong thermal neutron absorption capacity and good chemical stability. So boron carbide is widely used in metal polishing and cu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/991B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01P2002/82C01P2002/85C01P2004/03C01P2004/04C01P2004/61C01P2004/64C01B32/991
Inventor 钟博王猛夏龙张涛王春雨王华涛覃春林
Owner HARBIN INST OF TECH AT WEIHAI