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Target structure of physical vapor deposition

A technology of target structure and sputtering target, applied in the field of target structure, can solve the problem that different materials cannot be used

Inactive Publication Date: 2019-01-15
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, different materials cannot be used by changing the crafting recipe

Method used

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  • Target structure of physical vapor deposition
  • Target structure of physical vapor deposition
  • Target structure of physical vapor deposition

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Embodiment Construction

[0060] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the description below that a first feature is formed "on" a second feature or "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first feature is formed in direct contact. Embodiments where an additional feature may be formed between a feature and a second feature such that the first feature may not be in direct contact with the second feature. Additionally, this disclosure may reuse reference numbers and / or letters in various instances. Such re-use is for brevity and clarity and does not itself indicate a relationship between the v...

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Abstract

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includesa first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation. Accordingly, an in-situ deposition process that reduces manufacturing time and prevents particle contamination during deposition can be provided, thereby increasing reliability and increasing production yield.

Description

technical field [0001] Embodiments of the invention relate to a target structure. Background technique [0002] Current physical vapor deposition (PVD) processes use a target as a source of deposited material. Depending on the process recipe, the target can be used to deposit one or more materials at once in separate layers, such as metals and metal-containing compounds. However, different materials cannot be used by changing the process recipe. In order to deposit different materials (for example, AlCu and TiN), the workpiece must be transferred between different process chambers. In high temperature processing, time and delays in transferring between different chambers can affect material properties such as grain size and interface properties. Contents of the invention [0003] According to some embodiments of the present invention, a target structure is provided. The target structure includes a body having a first side and an opposing second side. A first sputter t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/50
CPCC23C14/3407C23C14/3464C23C14/505H01J37/3417H01J37/3429H01J37/3435C23C14/352C23C14/0641C23C14/165C23C14/14
Inventor 陈秉源陈宏政谢志轩王御轩
Owner TAIWAN SEMICON MFG CO LTD