Semiconductor device making method

Abstract

A semiconductor device making method includes providing a photomask having a patterned absorption layer over a substrate. The photomask is irradiated with a beam having a mixture of transverse electronic (TE) waves and transverse magnetic (TM) waves. The irradiating includes generating surface plasmonic polaritons (SPP) on a sidewall of the patterned absorption layer. The SPP is used to suppress the TM waves while reflecting the TE waves. A target substrate is exposed to TE waves.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor manufacturing technology, and in particular, to a method of manufacturing a semiconductor device using photolithography technology. Background technique [0002] The electronics industry has experienced an ever-increasing demand for smaller and faster electronic devices, which at the same time can support a greater number of increasingly complex and sophisticated functions. Therefore, there is a continuing trend in the semiconductor industry to manufacture integrated circuits (ICs) that are low cost, high performance, and low power consumption. To date, these goals have been largely achieved by reducing the size (eg, minimum feature size) of semiconductor integrated circuits, thereby improving manufacturing efficiency and reducing associated costs. However, such size reductions also lead to increased complexity in the semiconductor manufacturing process. Accordingly, achieving continued ad...

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While various methods of enhancing imaging contrast have been developed, these methods are still not universally applicable

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