Charge Injected Neuron Network Array

Abstract

A charge injection neuron network array, including neurons, neurons are divided into an input layer, an output layer and a hidden layer, and an activation function and a weight are used to establish a neuron network array capable of effectively processing tasks between each neuron; The charge injection is connected with the above-mentioned neuron network array, and the channel resistance in the transistor is used as the weight. Using the corresponding relationship between the charge injection and the channel resistance, and with the help of deep learning, the weight is realized by continuously changing the amount of charge injection. Constantly changing, the result is an array of charge-injected neuronal networks that can rapidly predict and modulate the threshold voltage of a transistor. Provides charge-injected neuron network arrays capable of rapidly predicting and modulating transistor threshold voltages. The invention realizes effective prediction and modulation of the threshold voltage by changing the weight of the array, and when the polarity of the applied voltage is reversed, the regulation of the threshold voltage is bidirectional without degrading the performance of the unit device.

Description

technical field [0001] The invention relates to the design of a node unit of a neuron network array. Specifically, a neuron network array using a charge injection transistor as a node unit is designed by utilizing the principle that the threshold voltage of a charge injection transistor can be adjusted. Background technique [0002] On the one hand, due to the limitation of the development of semiconductor process technology and the approach of the limit of the physical size of the device, the reduction of the size of the traditional integrated circuit and the increase of the density of the unit device have encountered more and more difficulties, while the transition from the traditional planar device to the three-dimensional three-dimensional device It has become an effective way to increase the density of unit devices. For example, in terms of memory, NAND flash memory under the three-dimensional architecture is widely used in mobile communication, data acquisition and oth...

AI Technical Summary

Problems solved by technology

[0006] The existing threshold voltage adjustment method is to adjust the threshold voltage by adding gate pressure stress to degrade the device characteristics, but this method brings about the degradation of the unit device, which is a one-way adjustment of the threshold voltage that is destructive to the device.

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